High Power Laser Science and Engineering, Volume. 13, Issue 4, 04000e55(2025)
Compact laser amplifier with high gain based on Nd3+-doped SrF2 crystal
Figures & Tables(13)
Fig. 1. Emission and absorption spectra for (a) 0.5%Nd,5%Gd:SrF2 crystal and (b) 0.5%Nd,5%Y:SrF2 crystal.
Fig. 2. (a) Configuration of the compact amplifier. (b) Coordinates of the crystal.
Fig. 5. (a) The normalized energy distribution. (b) The relation between the small signal gain coefficient and the pump time. (c) The energy distribution of ASE along the x’-axis. (d) The energy distribution of ASE along the z’-axis.
Fig. 6. Normalized distributions of the output pulse under three configurations: (a), (b) both crystals are 0.5%Nd,5%Gd:SrF2; (c), (d) both crystals are 0.5%Nd,5%Y:SrF2; and (e), (f) the first crystal is 0.5%Nd,5%Gd:SrF2 while the second crystal is 0.5%Nd,5%Y:SrF2. (a), (c) and (e) are time waveforms, while (b), (d) and (f) are spectra.
Fig. 7. Temperature distribution of Nd,Gd:SrF2 crystal. The perspectives are as follows: (a) y–z plane, x = 0 mm; (b) x–y plane, z = 3 mm; (c), (d) temperature distribution at three coordinate points.
Fig. 9. (a) Temperature as a function of time for three coordinate points. (b) Von Mises stress distribution in the x–y plane. (c) Displacement at different positions along the line segment from coordinate point (0, 0, 3) to (0, 12, 3). (d) Displacement at different positions along the line segment from coordinate point (0, 12, 3) to (12, 12, 3).
Table 1. The parameters of 0.5%Nd,5%Gd:SrF2 and 0.5%Nd,5%Y:SrF2.
View tableView in ArticleTable 1. The parameters of 0.5%Nd,5%Gd:SrF2 and 0.5%Nd,5%Y:SrF2.
Peak absorption Peak emission Emission Fluorescence cross-section cross-section linewidth lifetime Sample (×10–20 cm2) (×10–20 cm2) (nm) (μs) Nd,Gd:SrF2 3.68@797 nm 5.16@1052 nm 17 343 Nd,Y:SrF2 4.06@796 nm 4.96@1057 nm 16 356
Table 2. Values of the parameters in the ASE simulation.
View tableView in ArticleTable 2. Values of the parameters in the ASE simulation.
${\eta}_{\mathrm{A}}$ Parameter $N$ ${t}_{\mathrm{p}}$ $t{\hbox{'}}$ ${\eta}_{\mathrm{T}}$ ${\eta}_{\mathrm{S}}$ (for ${g}_0$ $V$ ${N}_{\mathrm{ray}}$ Value 870 320 μs 10 0.9900 0.7576 0.9840 0.4098 cm3 21,025
Table 3. The broadband characteristic under various conditions.
View tableView in ArticleTable 3. The broadband characteristic under various conditions.
Pump time 1 Pump time 2 Peak wavelength Output bandwidth Output energy B-integral Crystal 1 (μs) Crystal 2 (μs) (nm) (nm) (mJ) (×10–5) Nd,Gd:SrF2 240 Nd,Gd:SrF2 240 1052.06 1.98 5.39 3.81 Nd,Y:SrF2 265 Nd,Y:SrF2 265 1056.93 3.36 5.76 3.12 Nd,Gd:SrF2 260 Nd,Y:SrF2 260 1057.92 8.30 5.05 1.50 Nd,Gd:SrF2 280 Nd,Y:SrF2 240 1057.94 8.44 5.03 1.37 Nd,Gd:SrF2 300 Nd,Y:SrF2 225 1057.94 8.53 5.33 1.35 Nd,Gd:SrF2 320 Nd,Y:SrF2 205 1052.05 8.56 4.91 1.14
Table 4. Values of the parameters in the thermal simulation.
View tableView in ArticleTable 4. Values of the parameters in the thermal simulation.
Parameter $\rho$ ${{C}}_{\mathrm{p}}$ ${t}_{\mathrm{p}}$ $k$ $P$ ${S}_{\mathrm{LD}}$ ${h}_{\mathrm{a}}$ ${T}_0$ Value 4.46 g/cm3 543 $\mathrm{J}/(\mathrm{kg}\cdot \mathrm{K})$ 500 μs 4 $\mathrm{W}/(\mathrm{m}\cdot \mathrm{K})$ 7200 W 20 mm2 5 $\mathrm{W}/(\mathrm{K}\cdot \mathrm{m}^2)$ 293.15 K
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Siqi Long, Lailin Ji, Xianghe Guan, Yong Cui, Fujian Li, Zhonghan Zhang, Tianxiong Zhang, Zhen Zhang, Jian Shi, Dong Liu, Ruijing He, Xiaohui Zhao, Tao Wang, Xiaoli Li, Jianjun Cao, Jinsheng Liu, Yanqi Gao, Liangbi Su, Zhan Sui. Compact laser amplifier with high gain based on Nd3+-doped SrF2 crystal[J]. High Power Laser Science and Engineering, 2025, 13(4): 04000e55
Paper Information
Category: Research Articles
Received: Sep. 27, 2024
Accepted: Mar. 4, 2025
Published Online: Aug. 26, 2025
The Author Email: Lailin Ji (jsycjll@siom.ac.cn), Zhan Sui (lqling@vip.163.com)
CSTR:32185.14.hpl.2025.26
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