Fig. 1. (Color online) Schematic diagram of fabrication procedure of heteroepitaxial diamond on Ir/YSZ/Si (001). (a) 2-inch Si (001) substrate. (b) YSZ buffer layer deposition. (c) Ir buffer layer deposition. (d) Diamond nucleation by BEN. (e) Thin diamond growth. (f) Laser patterned diamond template. (g) Thick diamond growth. (h) Diamond self-detachment.

Fig. 2. (Color online) (a) X-ray diffractograms of θ−2θ scan of the heteroepitaxial diamond on Ir/YSZ/Si (001). (b) In-plane φ scan of diamond {111} and Ir {111} at a polar angle of χ = 54.74°. (c) X-ray pole figure of diamond {111} diffraction peaks. (d) XRCs of diamond (400), (e) diamond (311), and (f) diamond (220) diffraction peaks from the freestanding diamond.

Fig. 3. (Color online) (a) Picture of the 2-inch freestanding diamond crystal grown on Ir/YSZ/Si (001). (b) Microscope image of the as-grown diamond surface after plasma etching to reveal dislocation.