Journal of Semiconductors, Volume. 46, Issue 3, 032401(2025)
Charge carrier management via semiconducting matrix for efficient self-powered quantum dot infrared photodetectors
Fig. 1. (Color online) (a) The preparation process schematic of PbS QD-only film (control film) PbS QD/CuSCN bulk-heterojunction film (target film); the charge transport characteristics of photodetectors based on (b) OA−PbS QDs, (c) PbI2−PbS QDs, and (d) PbI2−PbS QDs/CuSCN hybrid mixture as active layer, respectively.
Fig. 2. (Color online) (a) TEM and (b) HRTEM images of PbI2−PbS QDs/CuSCN film; EDX images of (c) Cu element and (d) Pb element of PbI2−PbS QDs/CuSCN film; (e) UV−vis absorption spectra of control film and target film, respectively; (f) the current density−voltage curves of hole-only devices based on control film and target film as active layer, respectively (the inset shows the device structure used for the measurement).
Fig. 3. (Color online) (a) UPS of PbI2−PbS QD film; (b) energy level diagram of compositions in target photodetector; (c) steady state PL spectra of target film and control film; (d) current−voltage curves of devices based on target film and control film, where the inset shows the device structure used for the measurement.
Fig. 4. (Color online) (a) EQE spectra of target devices and control devices; (b) I−V curves of target devices and control devices in dark; (c) light response of target devices and control devices illuminated under 808 nm laser with different intensities from 0.1 μW/cm2 to 10 mW/cm2; (d) photocurrent response spectra of target devices and control devices at different wavelength; (e) R and (f) D* of target devices and control devices at different wavelength.
Fig. 5. (Color online) (a) R and (b) D* values of target devices and control devices irradiated with different Plight at 808 nm under 0 bias voltage; (c) Plight dependence of Jsc of target devices and control devices; (d) Plight dependence of Voc of target devices and control devices; (e) electrochemical impedance spectra of target devices and control devices under near Voc of 0.6 V; (f) TPC spectra of target devices and control devices.
Fig. 6. (Color online) (a) SNR of target devices and control devices; (b) LDR of target devices and control devices.
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Jianfeng Ding, Xinying Liu, Yueyue Gao, Chen Dong, Gentian Yue, Furui Tan. Charge carrier management via semiconducting matrix for efficient self-powered quantum dot infrared photodetectors[J]. Journal of Semiconductors, 2025, 46(3): 032401
Category: Research Articles
Received: Oct. 20, 2024
Accepted: --
Published Online: Apr. 27, 2025
The Author Email: Yueyue Gao (YYGao), Furui Tan (FRTan)