Microelectronics, Volume. 51, Issue 3, 399(2021)

Study on the Effects of Mechanical Stress on β of Bipolar Transistors

LIU Yong1,2, LIU Jian1, ZHANG Peijian2,3, WANG Fei1,2, and XIAO Tian1,2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    References(8)

    [1] [1] ABERG I, NI C C, HOYT J L. Ultrathin-body strained-Si and SiGe heterostructure-on-insulator MOSFETs [J]. IEEE Trans Elec Dev, 2006, 53(5), 1021-1029.

    [2] [2] TEZUKA T, NAKAHARAI S, MORIYAMA Y, et al. High-mobility strained SiGe-on-insulator pMOSFETs with Ge-rich surface channels fabricated by local condensation technique [J]. IEEE Elec Dev Lett, 2005, 26(4): 243-245.

    [3] [3] THOMPSON S E, ARMSTRONG M, AUTH C, et al. A 90-nm logic technology featuring strained-silicon [J]. IEEE Trans Elec Dev, 2004, 51(11): 1790-1797.

    [4] [4] WEE C, MAIKOP S, LIU C Y. Mobility-enhancement technologies [J]. IEEE Circ & Devs Magaz, 2005, 21(3): 21-36.

    [5] [5] CHATTERJEE S, CHATTOPADHYAY S. Fraction of insertion of the channel fin as performance booster in strain-engineered p-FinFET devices with insulator-on-silicon substrate [J]. IEEE Trans Elec Dev, 2018, 65(2): 411-418.

    [6] [6] LIU K M, CHEN E C. Investigation of the effects and the random-dopant-induced variations of source/drain extension of 7-nm strained SiGe n-type FinFETs [J]. IEEE Trans Elec Dev, 2019, 66(2): 847-854.

    [8] [8] BOCH J, FLEETWOOD D M, SCHRIMPF R D, et al. Impact of mechanical stress on total-dose effects in bipolar ICs [J]. IEEE Trans Nucl Sci, 2003, 50(6): 2335-2340.

    [9] [9] PERETTI G, DEMARCO G E. 3D thermal and mechanical analysis of a single event burnout [J]. IEEE Trans Nucl Sci, 2015, 62(4): 1879-1887.

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    LIU Yong, LIU Jian, ZHANG Peijian, WANG Fei, XIAO Tian. Study on the Effects of Mechanical Stress on β of Bipolar Transistors[J]. Microelectronics, 2021, 51(3): 399

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    Paper Information

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    Received: Jan. 11, 2021

    Accepted: --

    Published Online: Mar. 11, 2022

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.210020

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