Laser & Optoelectronics Progress, Volume. 62, Issue 9, 0928001(2025)

Linear-Logarithmic Response High Dynamic Range Pixel Structure Based on Charge Compensation

Shuo Sun1,2, Jing Gao1,2、*, Kaiming Nie1,2, and Jiangtao Xu1,2
Author Affiliations
  • 1School of Microelectronics, Tianjin University, Tianjin 300072, China
  • 2Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology, Tianjin 300072, China
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    Figures & Tables(12)
    Cross section and circuit diagram of the pixel. (a)Cross section of the pixel; (b)circuit diagram of the pixel
    Pixel timing change diagram
    Pixel node potential variation diagram. (a) Weak light conditions; (b) high light conditions; (c) very high light conditions
    Pixel simulation profile
    Variation of VFD2 with different Pin values. (a)Plot of VFD2 over time; (b)variation of ∆VFD2 with Pin value
    Plot of VFD2last versus Pin value. (a) Pin ≤ 0.03 W/cm2; (b) Pin ≥ 0.033 W/cm2
    Pixel layout
    Variation of VFD2last with Pin value under different VA conditions. (a) Pin ≤ 0.04 W/cm2; (b) Pin ≥ 0.027 W/cm2
    Variation of dynamic range of pixels under different VA conditions. (a) Linear DR; (b) logarithmic DR; (c) combined DR
    Variation of ΔVFD2 with Pin value at different temperatures
    • Table 1. High dynamic range pixel specific parameter index

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      Table 1. High dynamic range pixel specific parameter index

      ParameterValue
      Process technology110 nm 1P4M CIS
      Supply voltage /V3.3
      Pixel size /(μm×μm)6×6
      Fill factor /%40
      Readout noise /e-1.995
      Logarithmic sensitivity /[mV/(′)]-61.13
      Linear dynamic range /dB97.76
      Logarithmic dynamic range /dB55.14
      Combined dynamic range /dB152.9
    • Table 2. Comparison of high dynamic range pixel characteristics

      View table

      Table 2. Comparison of high dynamic range pixel characteristics

      ParameterProposedRef. [12Ref. [15Ref. [14
      HDR techniqueLin-logLin-logLin-logLin-log
      Process technology0.11 μm 1P4M CMOS0.18 μm 1P6M CMOS0.35 μm standard CMOS0.35 μm 1P4M CIS
      Pixel size /(μm×μm)6×66×610×1010×10
      Fill factor /%4032.5428.4>70
      Linear FWC /(ke-154.18*92.8**77**
      Capability to detect low lightGoodPoorGoodGood
      Logarithmic sensitivity /[mV/(′)]-61*-55**-70**
      Linear dynamic range /dB97.76*92**
      Logarithmic dynamic range /dB55.14*51**
      Combined dynamic range /dB152.90*143**106 **>140**
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    Shuo Sun, Jing Gao, Kaiming Nie, Jiangtao Xu. Linear-Logarithmic Response High Dynamic Range Pixel Structure Based on Charge Compensation[J]. Laser & Optoelectronics Progress, 2025, 62(9): 0928001

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    Paper Information

    Category: Remote Sensing and Sensors

    Received: Aug. 7, 2024

    Accepted: Sep. 12, 2024

    Published Online: May. 9, 2025

    The Author Email: Jing Gao (gaojing@tju.edu.cn)

    DOI:10.3788/LOP241816

    CSTR:32186.14.LOP241816

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