Infrared and Laser Engineering, Volume. 51, Issue 7, 20210587(2022)
Recent research progress of silicon photomultiplier with epitaxial quenching resistor
Fig. 1. Structure diagram of P on N type EQR SiPM. (a) Profile structure; (b) Planer structure
Fig. 5. Fix driving voltage and pulse width, photocurrent of PIN and SiPM as a function of LED driving frequency, with EQR15-LE @4 V as an example
Fig. 8. Histogram of pulse area. (a) EQR15-LE @83%
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Lin Zhang, Gang Xie, Yuxiao Liu, Huixia Zhang, Kun Liang, Ru Yang, Dejun Han. Recent research progress of silicon photomultiplier with epitaxial quenching resistor[J]. Infrared and Laser Engineering, 2022, 51(7): 20210587
Category: Optical devices
Received: Aug. 18, 2021
Accepted: --
Published Online: Dec. 20, 2022
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