Infrared and Laser Engineering, Volume. 51, Issue 7, 20210587(2022)

Recent research progress of silicon photomultiplier with epitaxial quenching resistor

Lin Zhang, Gang Xie, Yuxiao Liu, Huixia Zhang, Kun Liang*, Ru Yang, and Dejun Han
Author Affiliations
  • Novel Device Laboratory, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China
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    Figures & Tables(10)
    Structure diagram of P on N type EQR SiPM. (a) Profile structure; (b) Planer structure
    Experimental setup diagram of PDE measurement
    Reverse I-V curve of EQR SiPM
    DCR and PDiCT as a function of overvoltage
    Fix driving voltage and pulse width, photocurrent of PIN and SiPM as a function of LED driving frequency, with EQR15-LE @4 V as an example
    PDE as a function of overvoltage at 420 nm
    PDE as a function of wavelength
    Histogram of pulse area. (a) EQR15-LE @83%OVmax;(b) EQR06 series@80%OVmax
    Gain as a function of overvoltage
    • Table 1. Main characteristic parameters comparison between NDL and HAMAMATSU SiPM

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      Table 1. Main characteristic parameters comparison between NDL and HAMAMATSU SiPM

      Research instituteHAMAMATSUNDL
      SeriesS14160-3015 PSEQR15 11-3030 D
      Active area/mm23.0×3.03.0×3.0
      Microcell size/μm1515
      Microcell number3998440000
      Breakdown voltage (Vb)/V 38±328±0.2
      Recommended operating voltage (Vop)/V Vb+4 Vb+7
      Photon detection efficiency (PDE) @Vop32% @460 nm46% @410 nm
      Gain @Vop3.6×1053.5×105
      Dark count rate (DCR) @VopTypical: 700 kHzTypical: 2 000 kHz
      Crosstalk probability @Vop<1%11%
      Terminal capacitance/pF53048
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    Lin Zhang, Gang Xie, Yuxiao Liu, Huixia Zhang, Kun Liang, Ru Yang, Dejun Han. Recent research progress of silicon photomultiplier with epitaxial quenching resistor[J]. Infrared and Laser Engineering, 2022, 51(7): 20210587

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    Paper Information

    Category: Optical devices

    Received: Aug. 18, 2021

    Accepted: --

    Published Online: Dec. 20, 2022

    The Author Email:

    DOI:10.3788/IRLA20210587

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