Infrared and Laser Engineering, Volume. 51, Issue 7, 20210587(2022)

Recent research progress of silicon photomultiplier with epitaxial quenching resistor

Lin Zhang, Gang Xie, Yuxiao Liu, Huixia Zhang, Kun Liang*, Ru Yang, and Dejun Han
Author Affiliations
  • Novel Device Laboratory, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China
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    The Novel Device Laboratory (NDL) of Beijing Normal University has been developing a silicon photomultiplier with an epitaxial quenching resistor (EQR SiPM), which has a compact structure and a relatively simple fabrication process. Recently, to meet the requirements of nuclear medicine imaging, NDL has successfully developed an EQR SiPM with a microcell size of 15 μm and an active area of 9 mm2 by optimizing the device structure and fabrication technology. Compared to previous devices of the same type, the dark count rate (DCR) of the EQR SiPM is further reduced while still maintaining high photon detection efficiency (PDE). At an ambient temperature of 20 ℃ and an operating overvoltage of 7 V, the typical DCR is 226 kHz/mm2, and the peak PDE is 46%. In addition, to further increase the dynamic range of the EQR SiPM, NDL has developed an EQR SiPM with a microcell size of 6 μm, an active area of 9 mm2 and a microcell number of 244720. At an ambient temperature of 20 ℃ and an operating overvoltage of 7 V, the typical DCR is 240 kHz/mm2, and the peak PDE is 28%. It has large dynamic range that is very suitable for the measurement of high-energy cosmic rays and other applications in hadron calorimeters.

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    Lin Zhang, Gang Xie, Yuxiao Liu, Huixia Zhang, Kun Liang, Ru Yang, Dejun Han. Recent research progress of silicon photomultiplier with epitaxial quenching resistor[J]. Infrared and Laser Engineering, 2022, 51(7): 20210587

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    Paper Information

    Category: Optical devices

    Received: Aug. 18, 2021

    Accepted: --

    Published Online: Dec. 20, 2022

    The Author Email:

    DOI:10.3788/IRLA20210587

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