Optoelectronic Technology, Volume. 40, Issue 3, 195(2020)

Research on Technology to Enhance the Quantum Efficiency in Ultraviolet Spectral Range of CCD

Xiaodong WANG1, Chaomin WANG1, Zhihong FU2, and Jie WANG2
Author Affiliations
  • 1.Chongqing Optoelectronics Research Institute, Chongqing 400060, CHN
  • 2China Academy of Space Technology, Beijing 100094, CHN
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    Figures & Tables(12)
    Photo⁃sensitive region structure of traditional CCD
    Transmittance curves of different silicon nitride thicknesses
    Transmittance curves of different silicon oxide thicknesses
    Linear CCD response without HAD structure
    Linear CCD response with HAD structure
    Results of ion-implant with different dose and energy
    Results of ion-implant after optimizing the energy and dose
    SEM pictures before and after silicon nitride etching
    Result of optimization of silicon nitride etching
    The photo of ultraviolet linear CCD
    • Table 1. 波长300 nm~400 nm范围内不同厚度膜层的平均透射率

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      Table 1. 波长300 nm~400 nm范围内不同厚度膜层的平均透射率

      不同厚度Si3N4的平均透射率
      Si3N4厚度/nm0510152025303540

      300 nm~400 nm

      平均透射率/(%)

      56.72967.21278.28185.95886.78281.07471.84462.10953.683
      20 nm Si3N4,不同厚度表层SiO2的平均透射率
      表层SiO2厚度/nm0510152025303540

      300 nm~400 nm

      平均透射率/(%)

      86.78285.34383.06480.22477.10673.96771.02168.43166.320
    • Table 2. 硅衬底材料对不同波长光子吸收特性

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      Table 2. 硅衬底材料对不同波长光子吸收特性

      谱段B1B2B3B4B5B6B7B8B9B10
      波长范围/nm300~325325~350350~375375~400400~450450~500500~600600~700700~800800~900
      中心波长/nm315340365390425475550650750850
      谱段增量/nm252525255050100100100100
      反射系数0.580.600.610.480.440.420.380.350.350.35
      吸收深度/m0.0080.0110.0210.1330.3640.6781.5473.2297.06317.038
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    Xiaodong WANG, Chaomin WANG, Zhihong FU, Jie WANG. Research on Technology to Enhance the Quantum Efficiency in Ultraviolet Spectral Range of CCD[J]. Optoelectronic Technology, 2020, 40(3): 195

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    Paper Information

    Category: Research and Trial-manufacture

    Received: Apr. 20, 2020

    Accepted: --

    Published Online: Jan. 13, 2021

    The Author Email:

    DOI:10.19453/j.cnki.1005-488x.2020.03.009

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