Journal of Semiconductors, Volume. 42, Issue 1, 014101(2021)

Study of short-term synaptic plasticity in Ion-Gel gated graphene electric-double-layer synaptic transistors

Chenrong Gong, Lin Chen, Weihua Liu, and Guohe Zhang
References(37)

[8]

[30] et alGraphene synaptic transistor based on Ion-Gel dielectric. IEEE International Conference on Electron Devices and Solid-State Circuits, 1(2019).

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Chenrong Gong, Lin Chen, Weihua Liu, Guohe Zhang. Study of short-term synaptic plasticity in Ion-Gel gated graphene electric-double-layer synaptic transistors[J]. Journal of Semiconductors, 2021, 42(1): 014101

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Paper Information

Category: Articles

Received: May. 29, 2020

Accepted: --

Published Online: Mar. 19, 2021

The Author Email:

DOI:10.1088/1674-4926/42/1/014101

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