Chinese Journal of Lasers, Volume. 28, Issue 10, 877(2001)

Characteristic of the FBG External Cavity Semiconductor Laser with Weak Feedback

[in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    References(5)

    [2] [2] J. N. Walpole, E. S. Kintzer, S. R. Chinn et al... High-power strained-layer InGaAs/AlGaAs tapered traveling wave amplifier. Appl. Phys. Lett., 1992, 61(7):740~742

    [3] [3] Hiroshi Kakiuchida, Junji Ohtsubo. Characteristics of a semiconductor laser with external feedback. IEEE J. Quantum Electron., 1994, 30(9):2087~2097

    [4] [4] J. H. Osmundsen, N. Gade. Influence of optical feedback on laser frequency spectrum and threshold conditions. IEEE J. Quantum Electron., 1983, 19(3):465~469

    [5] [5] R. Lang, K. Kobayashi. External optical feedback effects on semiconductor injection laser properties. IEEE J. Quantum Electron., 1980, 16:347~355

    [6] [6] Huang Dexiu. Semiconductor Optical Electronics. 1st Edition. Chengdu: Press of Electronic Science and Technology University, 1989. 139 (in Chinese)

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Characteristic of the FBG External Cavity Semiconductor Laser with Weak Feedback[J]. Chinese Journal of Lasers, 2001, 28(10): 877

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    Paper Information

    Category: laser devices and laser physics

    Received: Jul. 24, 2000

    Accepted: --

    Published Online: Aug. 10, 2006

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