Chinese Journal of Lasers, Volume. 48, Issue 13, 1301003(2021)

1064 nm Wide-Ridge Waveguide Semiconductor Laser with Lateral Microstructure

Jun Qi, Yonggang Zou*, Jie Fan**, Jingjing Yang, Ying Liu, and Xiaohui Ma
Author Affiliations
  • State Key Laboratory of High Power Semiconductor Laser of Changchun University of Science and Technology, Changchun, Jilin 130022, China
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    Figures & Tables(8)
    Lateral microstructure wide-ridge waveguide semiconductor laser. (a) Device structure diagram; (b) SEM image of lateral microstructure wide-ridge waveguide; (c) packaged device diagram
    Modes distribution diagram of WR-LD
    Relationship between the lateral microstructures of different widths and the optical field distribution of each lateral mode. (a)--(c) Lateral microstructure width is 0 μm; (d)--(f) lateral microstructure width is 20 μm; (g)--(i) lateral microstructure width is 50 μm
    Mode loss graphs. (a) Relationship between the lateral microstructures of different widths and the loss of each lateral mode; (b) relationship between the lateral microstructure of different widths and the mode loss difference
    Near-field spot patterns. (a) WR-LD three-dimensional near-field spot pattern; (b) LMWR-LD three-dimensional near-field spot pattern; (c) two-dimensional near-field distribution pattern
    Schematic diagram of lateral divergence angle
    Device characteristic curves. (a) L-I-V characteristic curves; (b) electro-optic conversion efficiency characteristic curves
    • Table 1. Structure parameters of epitaxial layer

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      Table 1. Structure parameters of epitaxial layer

      NumberTypeMaterialThickness d /μmDoping level /cm-3Average refractive index
      1CapGaAs0.20002×10203.48
      2p-claddingAl0.5Ga0.5As1.00001×10183.23
      3p-waveguideAl0.3Ga0.7As0.15003.34
      4Active regionGaAs0.00173.66
      5Ga0.17As0.83P0.0060
      6In0.34Ga0.66As0.0060
      7Ga0.17As0.83P0.0060
      8GaAs0.0017
      9n-waveguideAl0.3Ga0.7As0.45003.34
      10n-claddingAl0.5Ga0.5As1.00001×10183.23
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    Jun Qi, Yonggang Zou, Jie Fan, Jingjing Yang, Ying Liu, Xiaohui Ma. 1064 nm Wide-Ridge Waveguide Semiconductor Laser with Lateral Microstructure[J]. Chinese Journal of Lasers, 2021, 48(13): 1301003

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    Paper Information

    Category: laser devices and laser physics

    Received: Nov. 5, 2020

    Accepted: Jan. 11, 2021

    Published Online: Jul. 1, 2021

    The Author Email: Zou Yonggang (zouyg@cust.edu.cn), Fan Jie (fanjie@cust.edu.cn)

    DOI:10.3788/CJL202148.1301003

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