Laser & Optoelectronics Progress, Volume. 60, Issue 21, 2100002(2023)
Research and Progress of High-Power Semiconductor Lasers with High Beam Quality
Fig. 2. 980 nm tapered laser with separated contacts [8]. (a) Structural diagram; (b) M2 under different output powers
Fig. 3. Fundamental lateral mode intensity of the two lasers[17]. (a) ADQW structure; (b) SQW structure
Fig. 4. Photon distribution at the end face of narrow ridge[21]. (a) Standard tapered laser; (b) DBR tapered laser
Fig. 5. Tapered laser with high-order surface gratings (HOSGs)[23]. (a) Structural diagram; (b) lateral far-field distribution and divergence angle under different output powers
Fig. 8. Morphology and efficiency of periodic small hole etching[27]. (a) Scanning electron microscopy (SEM) photograph; (b) P-I characteristic curve of semiconductor laser
Fig. 9. Structural diagrams of GaSb based laser with fishbone microstructure[28]. (a) Structural diagram; (b) SEM photograph of microstructure
Fig. 13. Sequence of steps leading to metal in contact with the sidewalls of the QCL device[34]
Fig. 14. Lateral and vertical beam quality factors M2 of the reference structure device and the new structure device at 20 ℃ room temperature, continuous current drive conditions[35]
Fig. 16. Structural diagram of laser with microthermal channel cooling structure electrodes
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Fen Chen, Bifeng Cui, Jingyu Feng, Xiangrui Zheng, Zhongbiao Chen. Research and Progress of High-Power Semiconductor Lasers with High Beam Quality[J]. Laser & Optoelectronics Progress, 2023, 60(21): 2100002
Category: Reviews
Received: Sep. 9, 2022
Accepted: Oct. 27, 2022
Published Online: Nov. 3, 2023
The Author Email: Bifeng Cui (cbf@bjut.edu.cn)