Laser & Optoelectronics Progress, Volume. 60, Issue 21, 2100002(2023)

Research and Progress of High-Power Semiconductor Lasers with High Beam Quality

Fen Chen, Bifeng Cui*, Jingyu Feng, Xiangrui Zheng, and Zhongbiao Chen
Author Affiliations
  • Key Laboratory of Opto-Electronics Technology of Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing 100124, China
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    Figures & Tables(17)
    Structural diagram of tapered laser
    980 nm tapered laser with separated contacts [8]. (a) Structural diagram; (b) M2 under different output powers
    Fundamental lateral mode intensity of the two lasers[17]. (a) ADQW structure; (b) SQW structure
    Photon distribution at the end face of narrow ridge[21]. (a) Standard tapered laser; (b) DBR tapered laser
    Tapered laser with high-order surface gratings (HOSGs)[23]. (a) Structural diagram; (b) lateral far-field distribution and divergence angle under different output powers
    Structural diagram of "solid bow tie" laser[24]
    Structural diagram of rhombus-like stripe laser
    Morphology and efficiency of periodic small hole etching[27]. (a) Scanning electron microscopy (SEM) photograph; (b) P-I characteristic curve of semiconductor laser
    Structural diagrams of GaSb based laser with fishbone microstructure[28]. (a) Structural diagram; (b) SEM photograph of microstructure
    Structural diagram of broad area laser with SCM structure[30]
    Structural diagram of broad area laser with LRW structure[31]
    2D structural diagram of broad area laser with inhomogeneous waveguide
    Sequence of steps leading to metal in contact with the sidewalls of the QCL device[34]
    Lateral and vertical beam quality factors M2 of the reference structure device and the new structure device at 20 ℃ room temperature, continuous current drive conditions[35]
    Structural diagram of laser package with air gap
    Structural diagram of laser with microthermal channel cooling structure electrodes
    • Table 1. Domestic and international research of high beam quality semiconductor lasers in recent years

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      Table 1. Domestic and international research of high beam quality semiconductor lasers in recent years

      LaserResearch institutionMain structureP/WLateral beam quality
      Laser in Ref.[22FBH,GermanyDBR tapered laser,super large optical cavity8.1M2=1.1
      Laser in Ref.[30University of Chinese Academy of Sciences,ChinaBroad area laser,SCM structure4.8Improve by 36.5%
      Laser in Ref.[33Air Force Research Laboratory,AmericaBroad area QCL,distributed sidewall loss structure6.0
      Laser in Ref.[34Technische Universität Berlin,GermanySingle-transverse mode laser,triangular-shaped corrugationstructure0.8M2<3
      Laser in Ref.[39University of Chinese Academy of Sciences,ChinaPackage,air gap1.3Improve by 40%
      Laser in Ref.[14University of Chinese Academy of Sciences,ChinaTapered laser,separated contacts6.4M2=1.66
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    Fen Chen, Bifeng Cui, Jingyu Feng, Xiangrui Zheng, Zhongbiao Chen. Research and Progress of High-Power Semiconductor Lasers with High Beam Quality[J]. Laser & Optoelectronics Progress, 2023, 60(21): 2100002

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    Paper Information

    Category: Reviews

    Received: Sep. 9, 2022

    Accepted: Oct. 27, 2022

    Published Online: Nov. 3, 2023

    The Author Email: Bifeng Cui (cbf@bjut.edu.cn)

    DOI:10.3788/LOP222510

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