[1] ARISTOV Y V, VORONKOV V B, GREKHOV I V et al. Semiconductor formers of high-voltage pulses of nanosecond duration[J]. Instruments and Experimental Techniques, 50, 350-352(2007).

[2] ZHANG Qi, JIN Xiao, SONG Falun. Development of drift step recovery diodes[J]. Vacuum Electronics, 8-13(2019).

[3] LIANG Qinjin. Research and development of solid state high power high repetition frequency pulse source[J]. Telecommunication Engineering, 59, 1227-1236(2019).

[4] IVANOV B V, SMIRNOV A A, SHEVCHENKO S A et al. High voltage subnanosecond silicon carbide opening switch[C](2016).

[5] ARISTOV Y V, VORONKOV V B, GREKHOV I V et al. Semiconductor formers of high-voltage pulses of nanosecond duration[J]. Instruments and Experimental Techniques, 50, 350-352(2007).

[6] KOZLOV V A, SMIRNOVA I A, MORYAKOVA S A et al. New generation of Drift Step Recovery Diodes (DSRD) for subnanosecond switching and high repetition rate operation[C](2002).

[7] VAINSHTEIN S, KOSTAMOVAARA J, MAATTA K et al. Subnanosecond high current switching with low-ohmic load by application of drift step-recovery diodes[C](1996).

[8] EFANOV A F, KARDO-SYSOEV A F, LARIONOV M A et al. Power semiconductor 80kV nanosecond pulser[C](1997).

[9] LYUBLINSKY A G, KOROTKOV S V, ARISTOV Y V et al. Pulse power nanosecond-range DSRD-based generators for electric discharge technologies[J]. IEEE Transactions on Plasma Science, 41, 2625-2629(2013).

[10] KESAR A S, SHARABANI Y, SHAFIR I et al. Characterization of a drift-step-recovery diode based on all Epi-Si growth[J]. IEEE Transactions on Plasma Science, 44, 2424-2428(2016).

[11] SHARABANI Y, SHAFIR I, ZORAN S et al. Validation of fast current interruption mechanism in sub-nanosecond high-voltage switching diodes[J]. IEEE Electron Device Letters, 37, 1041-1044(2016).

[12] IVANOV B V, SMIRNOV A A, SHEVCHENKO S A. A study of charge losses in 4H-SiC drift step recovery diodes (DSRD)[C](2016).

[13] IVANOV B V, SMIRNOV A A, SHEVCHENKO S A et al. High voltage subnanosecond silicon carbide opening switch[C](2016).

[14] IVANOV B V, SMIRNOV A A, SHEVCHENKO S A et al. A study of a low-voltage drift step recovery diode[C](2017).

[15] SMIRNOV A A, SHEVCHENKO S A. A study of the influence of forward bias pulse duration on the switching process of a 4H-SiC drift step recovery diode[J]. Journal of Physics: Conference Series, 993, 012033(2018).

[16] XIAO Jianping. An available ultrafast switch for high power UWS applications DSRD[J]. Electronic Information Warfare Technology, 22, 15-18(2007).

[17] ZHANG Ling, ZHOU Bin, XIE Yifang et al. Transmitter techniques for ultra-wideband ground penetratingradar based on drift step recovery diodes[J]. High Power Laser and Particle Beams, 96-100(2009).

[19] LIANG Qinjin, SHI Xiaoyan, CAO Xiaoyang. A fast ionization wave switch and its application in high voltage pulser[J]. Telecommunication Engineering, 68-71(2010).

[20] ZHOU Bin, LIU Lihua, FANG Guangyou. Design of a novel pulser based on DSRD[J]. Electronic Design Engineering, 21, 178-180,183(2013).

[21] WANG Yajie, HE Pengjun, JING Xiaopeng et al. Development of DSRD based solid-state pulsed generator with steep rise-time[J]. Fire Control Radar Technology, 50-54(2017).