[3] X WANG, B WOLFS, J BOGAERTS et al. A high-dynamic range （HDR） back-side illuminated （BSI） CMOS image sensor for extreme UV detection, 93-100(2012).

[4] F WEILER, T KANITZ, D WERNHAM et al. Characterization of dark current signal measurements of the ACCDs used on-board the aeolus satellite. Atmospheric Measurement Techniques Discussions, 1-39(2020).

[5] I HOPKINS, G R HOPKINSON. Random telegraph signals from proton-irradiated CCDs. IEEE Transactions on Nuclear Science, 40, 1567-1574(1993).

[6] I HOPKINS, G HOPKINSON. Further measurements of random telegraph signals in proton irradiated CCDs. IEEE Transactions on Nuclear Science, 42, 2074-2081(1995).

[7] V GOIFFON, P MAGNAN, P MARTIN-GONTHIER et al. Evidence of a novel source of random telegraph signal in CMOS image sensors. IEEE Electron Device Letters, 32, 773-775(2011).

[8] J BOGAERTS, B DIERICKX, R MERTENS. Random telegraph signals in a radiation-hardened CMOS active pixel sensor. IEEE Transactions on Nuclear Science, 49, 249-257(2002).

[9] T NUNS, G QUADRI, J P DAVID et al. Annealing of proton-induced random telegraph signal in CCDs. IEEE Transactions on Nuclear Science, 54, 1120-1128(2007).

[10] A ROCH, C VIRMONTOIS, P PAILLET et al. Phosphorus versus arsenic：role of the photodiode doping element in CMOS image sensor radiation-induced dark current and random telegraph signal. IEEE Transactions on Nuclear Science, 67, 1241-1250(2020).

[11] C DURNEZ, V GOIFFON, C VIRMONTOIS et al. Comparison of dark current random telegraph signals in silicon and InSb-based photodetector pixel arrays. IEEE Transactions on Electron Devices, 67, 4940-4946(2020).

[12] L BINGKAI, L YUDONG, W LIN et al. Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors. Results in Physics, 19, 103443(2020).

[13] L BINGKAI, L YUDONG, W LIN et al. Analysis of dark signal degradation caused by 1 MeV neutron irradiation on backside-illuminated CMOS image sensors. Chinese Journal of Electronics, 30, 180-184(2021).

[14] M WU, Y TANG, W GAO et al. Proton irradiation-induced random telegraph signal noise in a 2 k×2 k 4T CMOS active pixel sensor：testing，detection，and modeling. IEEE Transactions on Nuclear Science, 66, 1820-1827(2019).

[15] K KANDIAH. Random telegraph signal currents and low-frequency noise in junction field effect transistors. IEEE Transactions on Electron Devices, 41, 2006-2015(2002).

[16] Y MORI, K TAKEDA, R I YAMADA. Random telegraph noise of junction leakage current in submicron devices. Journal of Applied Physics, 107(2010).

[17] A YONEZAWA, A TERAMOTO, R KURODA et al. Statistical analysis of random telegraph noise reduction effect by separating channel from the interface(2012).

[18] R M FLEMING, C SEAGER, D LANG et al. Transformation kinetics of an intrinsic bistable defect in damaged silicon. Journal of Applied Physics, 111(2012).

[20] C DURNEZ, V GOIFFON, C VIRMONTOIS et al. In-depth analysis on radiation induced multi-level dark current random telegraph signal in silicon solid state image sensors. IEEE Transactions on Nuclear Science, 64, 19-26(2016).

[21] V GOIFFON, G HOPKINSON, P MAGNAN et al. Multilevel RTS in proton irradiated CMOS image sensors manufactured in a deep submicron technology. IEEE Transactions on Nuclear Science, 56, 2132-2141(2009).

[22] X WANG, P R RAO, A MIEROP et al. Random telegraph signal in CMOS image sensor pixels(2006).

[23] A HÉMERYCK, N RICHARD et al. Simulation of single-particle displacement damage in silicon—part Ⅲ：first principle characterization of defect properties. IEEE Transactions on Nuclear Science, 65, 724-731(2018).

[24] C HUET, N SALLES et al. Finding reaction pathways and transition states：r-ARTn and d-ARTn as an efficient and versatile alternative to string approaches. Journal of Chemical Theory and Computation, 16, 6726-6734(2020).