Chinese Journal of Lasers, Volume. 37, Issue 2, 379(2010)

Characteristics of High Power Al-Free Quantum-Well Laser Diode Array

Hu Liming1,2、*, Li Zaijin1,2, Qin Li1, Yang Ye1,2, Wang Ye1,2, Liu Yun1, Wang Bingbing3, and Wang Lijun1
Author Affiliations
  • 1[in Chinese]
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  • 3[in Chinese]
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    [2] [2] H. Knig,G. Grnninger,Peter Brick et al.. Brilliant high power laser bars for industrial applications[C]. SPIE,2008,6876:687616

    [3] [3] Shan Xiaonan,Zhang Jing,Wang Lijun. Design of 980 nm high-power semiconductor laser therapeutic equipment[J]. Chinese J. Lasers,2006,33(suppl):435-438

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    [6] [6] Roland Diehl. High Power Diode Lasers[M]. Heidelberg:Springer,2000. 200-201

    [8] [8] Zhang Xiaobo,Gao Dingsan. The thermal effects in semiconductor laser arrays[J]. J. China Institue of Communications,1990,11(5):34-38

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    CLP Journals

    [1] Hu Liming, Li Zaijin, Qin Li, Yang Ye, Wang Ye, Liu Yun, Wang Lijun. Thermal Analysis of High-Power,High-Duty-Cycle Laser Diode Array[J]. Acta Optica Sinica, 2010, 30(4): 1055

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    Hu Liming, Li Zaijin, Qin Li, Yang Ye, Wang Ye, Liu Yun, Wang Bingbing, Wang Lijun. Characteristics of High Power Al-Free Quantum-Well Laser Diode Array[J]. Chinese Journal of Lasers, 2010, 37(2): 379

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    Paper Information

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    Received: Mar. 4, 2009

    Accepted: --

    Published Online: Feb. 3, 2010

    The Author Email: Liming Hu (henryhulm2003@163.com)

    DOI:10.3788/cjl20103702.0379

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