Acta Optica Sinica, Volume. 42, Issue 2, 0206001(2022)

Wavelength Conversion Characteristics of Quantum-Dot Semiconductor Optical Amplifier Based on Photonic Crystal

Xiaobo Li1, Hailong Wang1、*, Linan Ma1, and Qian Gong2
Author Affiliations
  • 1Shandong Provincial Key Laboratory of Laser Polarization and Information Technology, School of Physics and Engineering, Qufu Normal University, Qufu, Shandong 273165, China
  • 2Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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    Figures & Tables(13)
    Three-level structural diagram of QD-SOA
    Structural diagram of PC-QDSOA
    Wavelength conversion schematic of PC-QDSOA
    Input and output waveforms of PC-QDSOA for wavelength conversion. (a) Input pump light waveform; (b) input probe light waveform; (c) output pump light waveform; (d) output probe light waveform
    Relationship between maximum mode gain and Q factor
    Relationship between pump power and Q factor
    Relationship between probe power and Q factor
    Relationship between length of active region and Q factor
    Relationship between injection current and extinction ratio
    Relationship between pump power and extinction ratio
    Relationship between probe power and extinction ratio
    Relationship between length of active region and extinction ratio
    • Table 1. Parameter selection table of PC-QDSOA

      View table

      Table 1. Parameter selection table of PC-QDSOA

      ParameterDescriptionValue
      hPlanck contant6.626×10-34 J·s-1
      eElectron charge1.6×10-19 C
      cLight speed in vacuum2.99792458×108 m·s-1
      LWEffective thickness of active layer0.2 μm
      NQSurface density of QDs5×1014 cm
      τW2Electron relaxation time from WL to ES3 ps
      τ21Electron escape time from ES to WL0.16 ps
      τWRSpontaneous radiative lifetime in WL2 ns
      τ1RSpontaneous radiative lifetime in GS0.4 ns
      τ12Electron escape time from GS to ES1 ps
      τ2WElectron escape time from ES to WL1 ns
      ηLine width enhancement factor0.1
      αintLoss coefficient of light320
      r1The first facet reflectivity0
      r2The second facet reflectivity0
      vgGroup velocity of light108 m·s-1
      RRadiation loss0.001 cm
      EsatSaturation energy0.07 pJ
      τCCarrier lifetime20 ps
      τCHTemperature relaxation rate0.3 ps
      τSHBCarrier-carrier scattering rate0.1 ps
      εCHCH nonlinear gain suppression factor0.02 W-1
      εSHBSHB nonlinear gain suppression factor0.02 W-1
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    Xiaobo Li, Hailong Wang, Linan Ma, Qian Gong. Wavelength Conversion Characteristics of Quantum-Dot Semiconductor Optical Amplifier Based on Photonic Crystal[J]. Acta Optica Sinica, 2022, 42(2): 0206001

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    Paper Information

    Category: Fiber Optics and Optical Communications

    Received: May. 11, 2021

    Accepted: Aug. 9, 2021

    Published Online: Dec. 29, 2021

    The Author Email: Wang Hailong (hlwang@qfnu.edu.cn)

    DOI:10.3788/AOS202242.0206001

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