Infrared and Laser Engineering, Volume. 50, Issue 11, 20210073(2021)

Study on InP/InGaAs hetero-structure detector with unintentionally doping absorption layer

Jiasheng Cao1,2,3, Tao Li1,2, Hongzhen Wang1,2,3, Chunlei Yu1,2, Bo Yang1,2, Yingjie Ma1,2, Xiumei Shao1,2, Xue Li1,2, and Haimei Gong1,2
Author Affiliations
  • 1State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 2Key Laboratory of Infrared Imaging Materials and Detectors, Chinese Academy of Sciences, Shanghai 200083, China
  • 3University of the Chinese Academy of Sciences, Beijing 100049, China
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    References(20)

    [1] Deng Honghai, Yang Bo, Shao Haibao, et al. Positive irradiation extended wavelength In0.8Ga0.2As infrared focal plane detector[J]. Infrared and Laser Engineering, 47, 0504004(2018).

    [2] Li Yongfu, Tang Hengjing, Li Tao, et al. Zn diffusion mechanism in InP/InxGa1-xAs heterostructures[J]. Infrared and Laser Engineering, 38, 951-956(2009).

    [3] Li Xue, Shao Xiumei, Li Tao, et al. Research progress of shortwave infrared InGaAs focal plane detector[J]. Infrared and Laser Engineering, 49, 0103006(2020).

    [4] Deng Honghai, Wei Peng, Zhu Yaoming, et al. Effect of annealing on Zn diffusion and its application in InGaAs detector[J]. Infrared and Laser Engineering, 41, 279-283(2012).

    [5] Yu Chunlei, Li Xue, Shao Xiumei, et al. Noise characteristics of shortwave infrared InGaAs focal plane[J]. Journal of Infrared and Millimeter Wave, 38, 528-534(2019).

    [6] Bun G H, Chung H J, Yi J H, et al. Electrical characterization of an operating Si pn-junction diode with scanning capacitance microscopy and Kelvin probe force microscopy[J]. J Appl Phys, 90, 443-448(2001).

    [7] Park S E, Nauven V, Kopanski J J, et al. Comparison of scanning capacitance microscopy and scanning Kelvin probe microscopy in determining two-dimensional doping profiles of Si homostructures[J]. J Vac Sci Technol B, 24, 404-407(2006).

    [8] Olsen G H, Ettenberg M. Universal stain/etchant for interfaces in Ⅲ-V compounds[J]. Journal of Applied Physics, 45, 5112-5114(1974).

    [9] Lv Y, Wang N, Zhuang C, et al. The uniformity of InGaAs in InP/InGaAs/InP by microwave photoconductivity decay (μ-PCD) carrier lifetime measurement[J]. Semiconductor Science & Technology, 21, 771-774(2006).

    [10] Ahrenkiel R K, Ellingson R, Johnston S, et al. Recombination lifetime of In0.53Ga0.47As as a function of doping density[J]. Applied Physics Letters, 72, 3470-3472(1998).

    [11] Zielinski E, Schweizer H, Streubel K, et al. Excitonic transitions and exciton damping processes in InGaAs/InP[J]. Journal of Applied Physics, 59, 2196-2204(1998).

    [12] Wintner E, Ippen E P. Nonlinear carrier dynamics in GaxIn1-xAsyP1-y compounds[J]. Applied Physics Letters, 44, 999-1001(1984).

    [13] [13] Wichman A R, Dewames R E, Bellotti E. Threedimensional numerical simulation of planar P+n heterojunction In0.53Ga0.47As photodiodes in dense arrays part I: dark current dependence on device geometry[C]Infrared Technology & Applications XL, 2014.

    [14] Chen M C. Photoconductivity lifetime measurements on HgCdTe using a contactless microwave technique[J]. J Appl Phys, 62, 946-947(1988).

    [15] Ichimura M, Hirano M, Tada A, et al. Characterization of Si wafers by μ-PCD with surface electric field[J]. Materials Science & Engineering B, 73, 230-234(2000).

    [16] Sontag D, Hahn G, Geiger P, et al. Two-dimensional resolution of minority carrier diffusion constants in different silicon materials[J]. Solar Energy Materials & Solar Cells, 72, 533-539(2002).

    [17] LV Yanqiu, Qiao Hui, Han Bing, et al. LBIC technology to study the crosstalk and light sensitive region of InGaAs line detector[J]. Infrared and Laser Engineering, 36, 708-710(2007).

    [18] Ong V K S, Wu D. Determination of diffusion length from within a confined region with the use of EBIC[J]. Electron Devices IEEE Transactions on, 48, 332-337(2001).

    [19] Shi Ming, Shao Xiumei, Tang Hengjing, et al. Inductively coupled plasma chemical vapor deposition silicon nitride for passivation of In0.83Ga0.17 As photodiodes[J]. Infrared Physics & Technology, 67, 197-201(2014).

    [20] Vishnu Gopal, Gopal V, Gupta S, et al. Temperature dependence of ohmic shunt resistance in mercury cadmium telluride junction diode[J]. Infrared Physics & Technology, 45, 265-271(2004).

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    Jiasheng Cao, Tao Li, Hongzhen Wang, Chunlei Yu, Bo Yang, Yingjie Ma, Xiumei Shao, Xue Li, Haimei Gong. Study on InP/InGaAs hetero-structure detector with unintentionally doping absorption layer[J]. Infrared and Laser Engineering, 2021, 50(11): 20210073

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    Paper Information

    Category: Infrared technology and application

    Received: Jul. 15, 2021

    Accepted: --

    Published Online: Dec. 7, 2021

    The Author Email:

    DOI:10.3788/IRLA20210073

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