Fig. 1. Schematic of experimental equipment and textured samples

Fig. 2. Electric field distribution of incident light with wavelength of 700 nm within micro-pores

Fig. 3. Effect of different hole distances on reflectivity

Fig. 4. Effects of each process parameter on pit etching depth on polysilicon surface. (a) Laser power; (b) pulse frequency; (c) scanning speed; (d) number of scannings

Fig. 5. Laser-etched polysilicon samples at different pore pitches. (a1)(b1)(c1)(d1) Micro-morphologies; (a2)(b2)(c2)(d2) corresponding curves of cross sections

Fig. 6. 3D topography of laser-etched polysilicon sample at pore pitch d=20 μm

Fig. 7. Reflectivity of textured polysilicon samples under different surface textures

Fig. 8. LSCM images of laser etched and chemically etched samples. (a) Laser etching, d=30 μm; (b) cut-open view for single pore of laser etched sample, d=30 μm; (c) chemical etching

Fig. 9. I-U curves of untextured, laser textured, and chemically etched silicon samples