Chinese Optics, Volume. 18, Issue 2, 256(2025)
Damage mechanism of back-illuminated CMOS image sensor irradiated by pulsed laser
Fig. 1. The two-dimensional structure of the back-illuminated CMOS image sensor
Fig. 2. Radiation results of 532 nm nanosecond single pulse laser. (a) Temperature distribution; (b) maximum temperature change in each layer
Fig. 3. Radiation results of
Fig. 4. Radiation results of 532 nm picosecond single pulse laser. (a) Temperature distribution; (b) maximum temperature change in each layer
Fig. 5. Radiation results of
Fig. 6. Experimental block of CMOS image sensor irradiated with 532 nm nanosecond single pulse laser
Fig. 7. Light path of CMOS image sensors irradiated by 532 nm nanosecond single pulse laser
Fig. 8. Damage condition of CMOS image sensors irradiated by 532 nm nanosecond single pulse laser. From left to right, the laser energy densities are 28.95 mJ/cm2, 69.91 mJ/cm2, 167.6 mJ/cm2, 519.3 mJ/cm2, respectively
Fig. 9. Experimental principle of CMOS image sensor irradiated with
Fig. 10. Light path of CMOS image sensor irradiated with
Fig. 11. Damage condition of CMOS image sensors irradiated by
Fig. 12. Experimental principle of CMOS image sensor irradiated with picosecond single pulse laser
Fig. 13. Light path of CMOS image sensor irradiated with single pulse picosecond laser
Fig. 14. Damage condition of CMOS image sensor irradiated by 532 nm picosecond pulse laser. From left to right, the laser energy densities are 18.95 mJ/cm2, 78.93 mJ/cm2, 120.49 mJ/cm2, 501.33 mJ/cm2, respectively
Fig. 15. Damage condition of CMOS image sensor irradicatd by
Fig. 16. Comparison between simulation results and experimental results of point damage threshold
Table 1. Thermodynamic parameters of materials
View tableView in ArticleTable 1. Thermodynamic parameters of materials
PI Si Al 密度/(kg·m−3) 1190 2329 2700 导热系数/(W·m−1K−1) 0.3 27 238 热膨胀系数(1/K) 2×10−5 2.6×10−6 23×10−6 恒压热容/(J·kg−1·K−2) 1510 700 900 杨氏模量(Pa) 3.2×109 170×109 70×109 泊松比 0.35 0.28 0.33 熔点(K) 710 1685 932
Table 2. Point damage thresholds under various laser parameters
View tableView in ArticleTable 2. Point damage thresholds under various laser parameters
单脉冲激光 点损伤阈值/（mJ·cm−2） 532 nm，1 ns 61.12 1064 nm，1 ns75.76 532 nm，30 ps 31.83 1064 nm，30 ps37.43
Table 3. Damage thresholds for each stage
View tableView in ArticleTable 3. Damage thresholds for each stage
点损伤 线损伤 功能性损伤 致盲 注：激光能量密度单位为mJ/cm2 纳秒 532 nm 28.95 69.91 167.6 519.3 1064 nm40.79 100.6 132.4 1.24×103 皮秒 532 nm 18.95 78.93 120.49 501.33 1064 nm19.71 90.76 123.80 566.19
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Fang QIAN, Jia-qi PENG, Yong-bo XU. Damage mechanism of back-illuminated CMOS image sensor irradiated by pulsed laser[J]. Chinese Optics, 2025, 18(2): 256
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Received: Aug. 1, 2024
Accepted: Oct. 22, 2024
Published Online: May. 19, 2025
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