Fig. 1. Silvaco model structure diagram of 850 nm VCSEL (a) and partial enlarged view of the quantum well region when the VCSEL is operating (b)

Fig. 2. Relationship between L-I characteristics of VCSEL and proton fluence under 3 MeV proton irradiation

Fig. 3. Relationship between normalized threshold current of VCSEL and DDD after 3 MeV and 10 MeV irradiation

Fig. 4. Comparison between simulation and experimental results of L-Icurve after 3 MeV proton irradiation

Fig. 5. Comparison of normalized threshold current extracted from simulation and experimental results

Fig. 6. Variation of trap dose, donor and acceptor ionized density with DDD extracted from Silvaco

Fig. 7. Relationship between VCSEL mirror loss and proton fluence after 10 MeV proton irradiation

Fig. 8. Variation of recombination rate and radiative recombination rate at quantum well with DDD

Fig. 9. Relationship between photon number in photon rate equation and DDD