Laser & Optoelectronics Progress, Volume. 60, Issue 5, 0514005(2023)

Design Optimization of Quantum Barrier and n-Type Waveguide Layers of AlGaN Ultraviolet Laser

Lu Liu and Shuping Li*
Author Affiliations
  • College of Physics and Technology, Xiamen University, Xiamen 361005, Fujian, China
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    Figures & Tables(8)
    Schematic diagram of UV-LD standard structure and new structures
    L-I-V characteristic curves of standard structure and three new structures
    Lasing spectra of four structures at current of 800 mA
    Energy band diagram of standard structures at current of 800 mA
    Energy band diagram of new structure C at current of 800 mA
    (a) Electron current density and (b) hole current density of four structures at current of 800 mA
    Stimulated recombination rates of four structures at current of 800 mA
    • Table 1. Photoelectric characteristics of four structures

      View table

      Table 1. Photoelectric characteristics of four structures

      StructureThreshold voltage /VThreshold current /mASlope efficiency /(W·A-1Output optical power /mW
      Standard structure8.38236.51.01571.2
      New structure A5.98132.51.02683.1
      New structure B7.05180.51.02632.3
      New structure C4.4962.31.05775.3
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    Lu Liu, Shuping Li. Design Optimization of Quantum Barrier and n-Type Waveguide Layers of AlGaN Ultraviolet Laser[J]. Laser & Optoelectronics Progress, 2023, 60(5): 0514005

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    Paper Information

    Category: Lasers and Laser Optics

    Received: Jan. 20, 2022

    Accepted: Feb. 21, 2022

    Published Online: Mar. 6, 2023

    The Author Email: Shuping Li (lsp@xmu.edu.cn)

    DOI:10.3788/LOP220591

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