Acta Optica Sinica, Volume. 44, Issue 22, 2223002(2024)

Optimized Simulation of Nano-LED Far-Field Radiation Intensity and Emission Angle

Zhipeng Zhang1, Hao Su1, Wenhao Li1, Shuqian Zhang1, Yanmin Guo1, Zheng Gong1, Tailiang Guo1,2, and Chaoxing Wu1,2、*
Author Affiliations
  • 1College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, Fujian , China
  • 2Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, Fujian , China
  • show less
    Figures & Tables(5)
    Analysis and optimization of influence of nano-LED shape. (a) Structure diagram of cylindrical gallium nitride-based nano-LED; (b) simulation model diagram of COMOSL; (c) schematic diagram of quantum well structure; (d), (e), (f) Two-dimensional (2D) cross-sectional electric field distribution diagrams of cylindrical nano-LED at D=0, 400, and 500 nm; (g), (h), (i) far-field polar coordinate diagrams of cylindrical nano-LED at D=0, 400, and 500 nm; (j) relationship between top diameter of cylindrical nano-LED and far-field intensity; (k) relationship between top diameter of cylindrical nano-LED and vertical emission angle
    Analysis and optimization of influence of gallium nitride thickness in cylindrical nano-LED quantum wells. (a) Quantum well structure; (b), (c), (d) 2D cross-sectional electric field distribution diagrams of cylindrical nano-LED at T=3,5, and 7 nm; (e) changes in far-field radiation intensity under different T; (f) changes in far-field intensity with emission angle at T=3, 5, and 9 nm; (g) relationship between quantum well thickness, overall emission angle, and far-field intensity
    Analysis and optimization of influence of width of external dielectric layer of cylindrical nano-LED. (a) Schematic diagram of cylindrical nano-LED structure after adding external dielectric layer; (b), (c), (d) 2D cross-sectional electric field distribution diagrams of cylindrical nano-LED at W=50, 100, and 200 nm; (e) changes in far-field radiation intensity under different W; (f) far field intensity changes with emission angle at W=50, 200, and 300 nm; (g) far field intensity changes with emission angle locally at W=50, 200, and 300 nm; (h) relationship between width of external dielectric layer and far field intensity; (i) relationship between width of external dielectric layer and overall emission angle
    Analysis and optimization of influence of refractive index of external dielectric layer of cylindrical nano-LED. (a) 2D cross-sectional electric field distribution diagram of cylindrical nano-LED at W=200 nm and n=1.5; (b) changes in far-field radiation intensity under different n; (c) relationship between refractive index of external dielectric layer and far-field intensity; (d) relationship between refractive index of external dielectric layer and overall emission angle; (e) 2D cross-sectional electric field distribution diagram of cylindrical nano-LED at W=300 nm and n=1.5; (f) changes in far-field radiation intensity under different n; (g) relationship between refractive index of external dielectric layer and far-field intensity; (h) relationship between refractive index of external dielectric layer and overall emission angle
    Final optimization effect comparison. (a) 2D cross-sectional electric field distribution diagrams of cylindrical nano-LED before and after optimization; (b) far-field radiation polar coordinate diagrams of cylindrical nano-LED before and after optimization
    Tools

    Get Citation

    Copy Citation Text

    Zhipeng Zhang, Hao Su, Wenhao Li, Shuqian Zhang, Yanmin Guo, Zheng Gong, Tailiang Guo, Chaoxing Wu. Optimized Simulation of Nano-LED Far-Field Radiation Intensity and Emission Angle[J]. Acta Optica Sinica, 2024, 44(22): 2223002

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Optical Devices

    Received: Jun. 7, 2024

    Accepted: Jul. 30, 2024

    Published Online: Nov. 19, 2024

    The Author Email: Chaoxing Wu (chaoxing_wu@fzu.edu.cn)

    DOI:10.3788/AOS241145

    CSTR:32393.14.AOS241145

    Topics