Study on the effect of gallium nitride low noise amplifier based on high power microwave pulse injection

Min LIU; Zongqi CAI; Li'an BIAN; Houlu TANG; Anru LÜ; Yiqiang CHEN; Guoguang LU

doi:10.19693/j.issn.1673-3185.03741

Chinese Journal of Ship Research, Volume. 20, Issue 4, 32(2025)

Study on the effect of gallium nitride low noise amplifier based on high power microwave pulse injection

Min LIU^1,2, Zongqi CAI², Li'an BIAN¹, Houlu TANG², Anru LÜ², Yiqiang CHEN², and Guoguang LU²

Author Affiliations

¹School of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410114, China

²National Key Laboratory of Science and Technology on Reliability Physics and Application of Electronic Component, The Fifth Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou 511370, China

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Table 1. Performance comparison of different samples before and after HPM injection

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Table 1. Performance comparison of different samples before and after HPM injection

样品编号	烧毁峰值功率	脉宽	周期	增益/dB		增益下降/dB	反射系数/dB		反射系数恶化/dB
样品编号	烧毁峰值功率	脉宽	周期	试验前	试验后	增益下降/dB	试验前	试验后	反射系数恶化/dB
1	33.70 dBm (2.344 W)	一直持续	一直持续	23.67	−36.64	60.31	−24.18	−6.97	17.21
2	34.86 dBm (3.062 W)	10 μs	100 μs	23.67	−42.88	66.55	−24.18	−14.55	9.63
3	46.00 dBm (39.811 W)	66 ns（上升/下降沿18 ns）	2 ms	23.67	−8.91	32.58	−24.18	−3.27	27.45

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Min LIU, Zongqi CAI, Li'an BIAN, Houlu TANG, Anru LÜ, Yiqiang CHEN, Guoguang LU. Study on the effect of gallium nitride low noise amplifier based on high power microwave pulse injection[J]. Chinese Journal of Ship Research, 2025, 20(4): 32

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Paper Information

Category: Symposium of Shipborne Electromagnetic Stealth and Anti-Jamming Technology

Received: Jan. 18, 2024

Accepted: --

Published Online: Sep. 11, 2025

The Author Email:

DOI:10.19693/j.issn.1673-3185.03741

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology