In order to study the properties of the Goos-Hnchen shift in semi-infinite hexagonal boron nitride covered by graphene, the influence of structural parameters on the Goos-Hnchen shift was analysised by using the transfer matrix method. The results show that: By reasonably adjusting the chemical potential or layer number of graphene, the transformation of Goos-Hnchen shift from positive to negative can be realized. By selecting the appropriate parameters, large Goos-Hnchen shifts can be realized and the maximum value is about 450 times of the wavelength. It is of great significance for the design of optical switches, optical couplers and other applications.