Laser & Optoelectronics Progress, Volume. 59, Issue 13, 1304003(2022)

Analysis of Saturation Characteristics of Silicon-Based Photodiodes Irradiated by Picosecond Laser

Meng Yao, Jifei Ye*, Lan Li, and Heyan Gao
Author Affiliations
  • State Key Laboratory of Laser Propulsion & Application, Department of Aerospace Science and Technology, Aerospace Engineering University, Beijing 101416, China
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    Figures & Tables(7)
    Working principle diagram of PN-type photodiode
    Schematic diagram of experimental device
    Pulse signal response waveforms under different laser energy densities
    Relationship between peak voltage and increase of laser energy density
    Rising edge time of diode irradiated by different laser energy densities
    Relationship between FWHM of signal and increase of laser energy density
    Relationship between BW of signal and increase of laser energy density
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    Meng Yao, Jifei Ye, Lan Li, Heyan Gao. Analysis of Saturation Characteristics of Silicon-Based Photodiodes Irradiated by Picosecond Laser[J]. Laser & Optoelectronics Progress, 2022, 59(13): 1304003

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    Paper Information

    Category: Detectors

    Received: Jul. 17, 2021

    Accepted: Sep. 3, 2021

    Published Online: Jun. 9, 2022

    The Author Email: Ye Jifei (yjf1981@163.com)

    DOI:10.3788/LOP202259.1304003

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