Journals Articles Conferences News About CLP
Submit a paper Email Alert
Search
Search
Articles
Journals
News
Advanced Search
Top Searches
2D MaterialsTransformation opticsQuantum PhotonicsSmall lasersSemiconductor UV PhotonicsSupersymmetric microring laser arrays

Photonics Research, Volume. 8, Issue 6, 899(2020)

Horizontal GeSn/Ge multi-quantum-well ridge waveguide LEDs on silicon substrates

Linzhi Peng1,2, Xiuli Li1,2, Zhi Liu1,2、*, Xiangquan Liu1,2, Jun Zheng1,2, Chunlai Xue1,2, Yuhua Zuo1,2, and Buwen Cheng1,2,3
Author Affiliations
  • 1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Beijing Academy of Quantum Information Sciences, Beijing 100193, China
    • show less
    Full TextGet PDF
    Figures&Tables (6)
    Equations (0)
    References (37)
    Cited By (25)
    Tools
    Paper Information
    Topics
    References(37)

    [1] Q. Xu, B. Schmidt, S. Pradhan, M. Lipson. Micrometre-scale silicon electro-optic modulator. Nature, 435, 325-327(2005).

    [2] F. Xia, L. Sekaric, Y. Vlasov. Ultracompact optical buffers on a silicon chip. Nat. Photonics, 1, 65-71(2006).

    [3] S. Assefa, F. Xia, Y. A. Vlasov. Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects. Nature, 464, 80-84(2010).

    [4] D. J. Richardson. Beating the electronics bottleneck. Nat. Photonics, 3, 562-564(2009).

    [5] W. Song, R. Gatdula, S. Abbaslou, M. Lu, A. Stein, W. Y. Lai, J. Provine, R. F. Pease, D. N. Christodoulides, W. Jiang. High-density waveguide superlattices with low crosstalk. Nat. Commun., 6, 7027(2015).

    [6] E. Timurdogan, C. M. Sorace-Agaskar, J. Sun, E. Shah Hosseini, A. Biberman, M. R. Watts. An ultralow power athermal silicon modulator. Nat. Commun., 5, 4008(2014).

    [7] H. Chen, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, S. Balakrishnan, P. Absil, W. Yao, L. Shen, G. Roelkens, J. Van Campenhout. −1  V bias 67  GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56  Gbps and beyond. Opt. Express, 24, 4622-4631(2016).

    [8] Z. Liu, J. Zhang, X. Li, L. Wang, J. Li, C. Xue, J. An, B. Cheng. 25 × 50  Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating. Photon. Res., 7, 659-663(2019).

    [9] M. V. Fischetti, S. E. Laux. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys. J. Appl. Phys., 80, 2234-2252(1996).

    [10] P. Moontragoon, Z. Ikonić, P. Harrison. Band structure calculations of Si–Ge–Sn alloys: achieving direct band gap materials. Semicond. Sci. Technol., 22, 742-748(2007).

    [11] K. Lu Low, Y. Yang, G. Han, W. Fan, Y.-C. Yeo. Electronic band structure and effective mass parameters of Ge1-xSnx alloys. J. Appl. Phys., 112, 103715(2012).

    [12] W. Huang, B. Cheng, C. Xue, Z. Liu. Comparative studies of band structures for biaxial (100)-, (110)-, and (111)-strained GeSn: a first-principles calculation with GGA+U approach. J. Appl. Phys., 118, 165704(2015).

    [13] S. Gupta, B. Magyari-Köpe, Y. Nishi, K. C. Saraswat. Achieving direct band gap in germanium through integration of Sn alloying and external strain. J. Appl. Phys., 113, 073707(2013).

    [14] W. Du, Y. Zhou, S. A. Ghetmiri, A. Mosleh, B. R. Conley, A. Nazzal, R. A. Soref, G. Sun, J. Tolle, J. Margetis, H. A. Naseem, S.-Q. Yu. Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates. Appl. Phys. Lett., 104, 241110(2014).

    [15] B.-J. Huang, C.-Y. Chang, Y.-D. Hsieh, R. A. Soref, G. Sun, H.-H. Cheng, G.-E. Chang. Electrically injected GeSn vertical-cavity surface emitters on silicon-on-insulator platforms. ACS Photon., 6, 1931-1938(2019).

    [16] Y. Zhou, W. Dou, W. Du, S. Ojo, H. Tran, S. A. Ghetmiri, J. Liu, G. Sun, R. Soref, J. Margetis, J. Tolle, B. Li, Z. Chen, M. Mortazavi, S.-Q. Yu. Optically pumped GeSn lasers operating at 270  K with broad waveguide structures on Si. ACS Photon., 6, 1434-1441(2019).

    [17] S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, D. Grützmacher. Lasing in direct-bandgap GeSn alloy grown on Si. Nat. Photonics, 9, 88-92(2015).

    [18] D. Stange, N. von den Driesch, D. Rainko, C. Schulte-Braucks, S. Wirths, G. Mussler, A. T. Tiedemann, T. Stoica, J. M. Hartmann, Z. Ikonic, S. Mantl, D. Grutzmacher, D. Buca. Study of GeSn based heterostructures: towards optimized group IV MQW LEDs. Opt. Express, 24, 1358-1367(2016).

    [19] D. Stange, N. von den Driesch, T. Zabel, F. Armand-Pilon, D. Rainko, B. Marzban, P. Zaumseil, J.-M. Hartmann, Z. Ikonic, G. Capellini, S. Mantl, H. Sigg, J. Witzens, D. Grützmacher, D. Buca. GeSn/SiGeSn heterostructure and multi quantum well lasers. ACS Photon., 5, 4628-4636(2018).

    [20] G. T. Reed, M. R. Watts, Y.-L. Lin, Y.-H. Huang, S.-W. Chen, G.-E. Chang. GeSn waveguide structures for efficient light detection and emission. Proc. SPIE, 9367, 93671G(2015).

    [21] Z. Liu, B.-W. Cheng, Y.-M. Li, C.-B. Li, C.-L. Xue, Q.-M. Wang. Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate. Chin. Phys. B, 22, 116804(2013).

    [22] C. Popescu, J. C. Manifacier, R. Ardebili. I-V curve shape factor for thin p-n junctions at high injection levels. Phys. Status Solidi A, 158, 611-621(1996).

    [23] C. T. Sah, R. N. Noyce, W. Shockley. Carrier generation and recombination in P-N junctions and P-N junction characteristics. Proc. IRE, 45, 1228-1243(1957).

    [24] V. R. D’Costa, D. Schmidt, W. Wang, Y.-C. Yeo. Temperature dependence of the dielectric function and interband transitions of pseudomorphic GeSn alloys. J. Vac. Sci. Technol. B, 34, 041204(2016).

    [25] Y. P. Varshni. Temperature dependence of the energy gap in semiconductors. Physica, 34, 149-154(1967).

    [26] S. L. Chuang. Physics of Optoelectronic Devices(1995).

    [27] C. G. Van de Walle. Band lineups and deformation potentials in the model-solid theory. Phys. Rev. B, 39, 1871-1883(1989).

    [28] H. Pérez Ladrón de Guevara, A. G. Rodríguez, H. Navarro-Contreras, M. A. Vidal. Nonlinear behavior of the energy gap in Ge1-xSnx alloys at 4K. Appl. Phys. Lett., 91, 161909(2007).

    [29] W.-J. Yin, X.-G. Gong, S.-H. Wei. Origin of the unusually large band-gap bowing and the breakdown of the band-edge distribution rule in the SnxGe1-x alloys. Phys. Rev. B, 78, 161203(2008).

    [30] N. Yahyaoui, N. Sfina, J. L. Lazzari, A. Bournel, M. Said. Band engineering and absorption spectra in compressively strained Ge0.92Sn0.08/Ge (001) double quantum well for infrared photodetection. Phys. Stat. Solidi C, 11, 1561-1565(2014).

    [31] A. A. Tonkikh, C. Eisenschmidt, V. G. Talalaev, N. D. Zakharov, J. Schilling, G. Schmidt, P. Werner. Pseudomorphic GeSn/Ge(001) quantum wells: examining indirect band gap bowing. Appl. Phys. Lett., 103, 032106(2013).

    [32] X. Sun, J. Liu, L. C. Kimerling, J. Michel. Direct gap photoluminescence of n-type tensile-strained Ge-on-Si. Appl. Phys. Lett., 95, 032106(2009).

    [33] M.-Y. Ryu, T. R. Harris, Y. K. Yeo, R. T. Beeler, J. Kouvetakis. Temperature-dependent photoluminescence of Ge/Si and Ge1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content. Appl. Phys. Lett., 102, 171908(2013).

    [34] W. Du, S. A. Ghetmiri, B. R. Conley, A. Mosleh, A. Nazzal, R. A. Soref, G. Sun, J. Tolle, J. Margetis, H. A. Naseem, S.-Q. Yu. Competition of optical transitions between direct and indirect bandgaps in Ge1-xSnx. Appl. Phys. Lett., 105, 051104(2014).

    [35] W. H. Chang, A. T. Chou, W. Y. Chen, H. S. Chang, T. M. Hsu, Z. Pei, P. S. Chen, S. W. Lee, L. S. Lai, S. C. Lu, M. J. Tsai. Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots. Appl. Phys. Lett., 83, 2958-2960(2003).

    [36] Z. Liu, W. Hu, C. Li, Y. Li, C. Xue, C. Li, Y. Zuo, B. Cheng, Q. Wang. Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells. Appl. Phys. Lett., 101, 231108(2012).

    [37] G. Sun, R. A. Soref, H. H. Cheng. Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser. J. Appl. Phys., 108, 033107(2010).

    Tools

    Get Citation

    Copy Citation Text

    Linzhi Peng, Xiuli Li, Zhi Liu, Xiangquan Liu, Jun Zheng, Chunlai Xue, Yuhua Zuo, Buwen Cheng, "Horizontal GeSn/Ge multi-quantum-well ridge waveguide LEDs on silicon substrates," Photonics Res. 8, 899 (2020)

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Set citation alerts for article
    Save article for my favorites
    Paper Information

    Category: Silicon Photonics

    Received: Dec. 30, 2019

    Accepted: Apr. 2, 2020

    Published Online: May. 18, 2020

    The Author Email: Zhi Liu (zhiliu@semi.ac.cn)

    DOI:10.1364/PRJ.386996

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology