[1] [1] Mei Suisheng. Progress of super high efficiency diode source reseach [J]. Laser & Optoelectronics Progress, 2005, 42(11):2～8

[2] [2] C. M. Stickley, M. E. Filipkowski, E. Parra et al.. Overview of progress in super high efficiency diodes for pumping high energy lasers [C]. SPIE, 2006, 6104:610405

[3] [3] M. Kanskar, T. Earles, T. J. Goodnough et al.. 73% CW power conversion efficiency at 50 W from 970 nm diode laser bars [J]. Electron. Lett., 2005, 41(5):226～227

[4] [4] P. Crump, Weimin Dong, Mike Grimshaw et al.. 100-W+diode laser bars show >71% power conversion from 790-nm to 1000-nm and have clear route to >85% [C]. SPIE, 2007, 6456:64560M

[5] [5] A. Knigge, G. Erbert, J. Jnsson et al.. Passively cooled 940 nm laser bars with 73% wall-plug efficiency at 70 W and 25 ℃ [J]. Electron. Lett., 2005, 41(5):246～247

[6] [6] M. Peters, V. Rossin, B. Acklin. High efficiency, high reliability laser diodes at JDS uniphase [C]. SPIE, 2005, 5711:142～151

[7] [7] Xin Guofeng, Qu Ronghui, Fang Zujie et al.. New development of high power semiconductor laser [J]. Laser & Optoelectronics Progress, 2006, 43(2):3～8

[8] [8] Yao Shun, Tao Getao, Liu Yun et al.. High efficiency 1.06 μm wavelength high power diode array modul [J]. Semiconductor Opotoelectronics, 2006, 27(3):260～262

[9] [9] Gtz Erbert, Frank Bugge, Andrea Knigge et al.. Highly reliable 75 W InGaAs/AlGaAs laser bars with over 70% conversion efficiency [C]. SPIE, 2006, 6133:61330B

[10] [10] Peter S. Zory. Quantum Well Lasers [M]. United Kingdom: Academic Press, 1993. 17～90

[11] [11] Wang Jun, Ma Xiaoyu, Lin Tao et al.. Design of SCH structure for high-power broad area 808 nm GaAsP/AlGaAs quantum-well laser [J]. Chinese Journal of Semiconductors, 2005, 26(12):2449～2454

[12] [12] Xu Zuntu, Xu Junying, Yang Guowen et al.. 980 nm InGaAs strained quantum well lasers and modules[J]. Chinese J. Lasers, 1997, A24(10):873～876

[13] [13] Gao Xin, Qu Yi, Bo Baoxue. Fabrication of 980 nm strained quantum well laser array [J]. J. Optoelectronics·Laser, 2003, 14(3):225～227

[14] [14] Chris G. Van de Walle. Band lineups and deformation potentials in the mode-solid theory [J]. Phys. Rev. B,1989, 39(3):1871～1883

[15] [15] A. Al-Muhanna, L. J. Mawst, D. Botez et al.. High-power (>10 W) continuous-wave operation from 100-μm-aperture 0.97-nm-emitting Al-free diode lasers [J]. Appl. Phys. Lett., 1998, 73(9):1182～1184

[16] [16] Zhong Li, Wang Jun, Feng Xiaoming et al.. 808 nm high-power lasers with Al-free active region with asymmetric waveguide structure [J]. Chinese J. Lasers, 2007, 34(8):1037～1042

[17] [17] Kai Zheng, Tao Lin, Li Jiang et al.. High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well interming [J]. Chin. Opt. Lett., 2006, 4(1):27～29

[18] [18] Li Jianjun, Han Jun, Deng Jun et al.. Tunnel regeneration high-power semiconductor laser with four active regions [J]. Acta Optica Sinica, 2006, 26(12):1819～1822