Photonics Research, Volume. 10, Issue 5, 1264(2022)

Four-wave mixing in 1.3 μm epitaxial quantum dot lasers directly grown on silicon Editors' Pick

Jianan Duan1,5、†,*, Bozhang Dong1、†, Weng W. Chow2, Heming Huang1, Shihao Ding1, Songtao Liu3,6, Justin C. Norman3,7, John E. Bowers3, and Frédéric Grillot1,4
Author Affiliations
  • 1LTCI, Télécom Paris, Institut Polytechnique de Paris, 91120 Palaiseau, France
  • 2Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
  • 3Institute for Energy Efficiency, University of California Santa Barbara, Santa Barbara, California 93106, USA
  • 4Center for High Technology Materials, University of New-Mexico, Albuquerque, New Mexico 87106, USA
  • 5Current address: State Key Laboratory on Tunable Laser Technology, School of Electronic and Information Engineering, Harbin Institute of Technology, Shenzhen 518055, China
  • 6Current address: Ayar Labs, Santa Clara, California 95054, USA
  • 7Current address: Quintessent, Inc., Goleta, California 93117, USA
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    Jianan Duan, Bozhang Dong, Weng W. Chow, Heming Huang, Shihao Ding, Songtao Liu, Justin C. Norman, John E. Bowers, Frédéric Grillot, "Four-wave mixing in 1.3 μm epitaxial quantum dot lasers directly grown on silicon," Photonics Res. 10, 1264 (2022)

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    Paper Information

    Category: Lasers and Laser Optics

    Received: Nov. 10, 2021

    Accepted: Feb. 28, 2022

    Published Online: Apr. 20, 2022

    The Author Email: Jianan Duan (duanjianan@hit.edu.cn)

    DOI:10.1364/PRJ.448082

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