Simulation Model of GaN-Based Micro-LED with High Light Extraction Efficiency

Xinpei Hu; Junhu Cai; Yuanyuan Ye; Enguo Chen; Jie Sun; Qun Yan; Tailiang Guo

doi:10.3788/AOS202242.1525001

Acta Optica Sinica, Volume. 42, Issue 15, 1525001(2022)

Simulation Model of GaN-Based Micro-LED with High Light Extraction Efficiency

Xinpei Hu¹, Junhu Cai¹, Yuanyuan Ye¹, Enguo Chen^1,2、*, Jie Sun^1,2, Qun Yan^1,2, and Tailiang Guo^1,2

¹National & Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, Fujian , China

²Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China (Mindu Innovation Laboratory), Fuzhou 350108, Fujian , China

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Xinpei Hu, Junhu Cai, Yuanyuan Ye, Enguo Chen, Jie Sun, Qun Yan, Tailiang Guo. Simulation Model of GaN-Based Micro-LED with High Light Extraction Efficiency[J]. Acta Optica Sinica, 2022, 42(15): 1525001

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Paper Information

Category: OPTOELECTRONICS

Received: Jan. 10, 2022

Accepted: Mar. 3, 2022

Published Online: Aug. 4, 2022

The Author Email: Chen Enguo (ceg@fzu.edu.cn)

DOI:10.3788/AOS202242.1525001

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