Chinese Journal of Lasers, Volume. 48, Issue 13, 1301004(2021)

Passively Q-Switched a-Cut Er, Yb∶YAl3(BO3)4 Microchip Laser

Songqing Zha1,2, Yujin Chen2、*, Mingyao Deng2,4, Yanfu Lin2, Bingxuan Li2, Yuqi Zou3, Wenbin Liao2, Zhanglang Lin2, and Ge Zhang2、**
Author Affiliations
  • 1School of Chemistry, Fuzhou University, Fuzhou, Fujian 351100, China
  • 2Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 351100, China
  • 3Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai 200000
  • 4College of Chemistry and Materials Science, Fujian Normal University, Fuzhou, Fujian 351100, China
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    Figures & Tables(6)
    Diagram of laser operating mechanism of energy level structure in Er, Yb∶YAB crystal
    Transmission spectrum of Co2+∶MgAl2O4 crystal, and experimental setup for passively Q-switched a-cut Er, Yb∶YAB microchip laser. (a) Transmission spectrum of Co2+∶MgAl2O4 crystal; (b) experimental setup for passively Q-switched a-cut Er, Yb∶YAB microchip laser
    Experimental performance of microchip laser. (a) Average output power and single pulse energy; (b) repetition rate and pulse duration
    Results recorded by oscilloscope for incident power of 7.2 W. (a) Pulse train and pulse repetition rate; (b) single pulse profile and pulse duration
    Test result of pulse laser polarization, and 2D and 3D images of pulse output spots. (a) Test result of pulse laser polarization; (b) 2D and 3D images of pulse output spots
    • Table 1. Conversion efficiency and maximum output power of various representative crystals in continuous laser experiments

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      Table 1. Conversion efficiency and maximum output power of various representative crystals in continuous laser experiments

      HostcrystalRepresentativecrystalPumpwavelength /nmLaserwavelength /nmConversionefficiency /%Pumppower /WMaximumoutputpower /WRef. No
      BorateEr,Yb∶YAl3(BO3)4976155039.807.20(incident power)2.00[16]
      SilicateEr, Yb∶Lu2Si2O7976156420.005.50(absorbable power)0.94[19]
      TungstateEr, Yb∶KY(WO4)298015901.666.50(absorbable power)0.08[20]
      OtherEr, Yb∶YAG96516457.000.45(absorbable power)0.03[21]
      Er, Yb∶YVO498016045.402.25(absorbable power)0.13[22]
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    Songqing Zha, Yujin Chen, Mingyao Deng, Yanfu Lin, Bingxuan Li, Yuqi Zou, Wenbin Liao, Zhanglang Lin, Ge Zhang. Passively Q-Switched a-Cut Er, Yb∶YAl3(BO3)4 Microchip Laser[J]. Chinese Journal of Lasers, 2021, 48(13): 1301004

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    Paper Information

    Category: laser devices and laser physics

    Received: Nov. 23, 2020

    Accepted: Jan. 18, 2021

    Published Online: Jul. 1, 2021

    The Author Email: Chen Yujin (cyj@fjirsm.ac.cn), Zhang Ge (zhg@fjirsm.ac.cn)

    DOI:10.3788/CJL202148.1301004

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