Fig. 1. (a) Schematic of the zero-reflection-based optical switch; the period of the SHM is d. (b), (c) Re(ε‖) and Im(ε‖) as functions of frequency and chemical potential.

Fig. 2. IFC analysis and simulation results for the optical switch at θi=60° and f=25  THz. (a), (c) Switch-off state (μc=0.2  eV). (b), (d) Switch-on state (μc=0.82  eV). The inset shows the enlargement of the energy distribution in the denoted square area.

Fig. 3. Snapshots at different time steps for a Gaussian beam with a finite length of time steps. (a) ts=100 time steps (before touching the interface), (b) ts=200 time steps (arriving at the interface), and (c) ts=2000 time steps (stably propagating along the interface). (d)–(f) Three snapshots after the Gaussian beam stops emitting from the source.

Fig. 4. Influence of absorption loss of dielectric layers on the optical switch. (a) OFF-state (μc=0.2  eV). (b) ON-state (μc=0.82  eV).

Fig. 5. Variation of reflection with chemical potential for f=24.5  THz, 25 THz, and 25.5 THz.

Fig. 6. μc-f curves with different parameter conditions: (a) ε‖=0, d=0.1  μm; (b) ε‖=−εd, d=0.1  μm; (c) ε‖=0, εd=1; (d) ε‖=−1, εd=1. The dashed lines indicate μc=0.2  eV and 0.9 eV, respectively.

Fig. 7. (a) μc-f curves for α=20°, 45°, 60°, and 80°. (b) IFC at f=25  THz for α=80° and ε‖=−0.07. (c) Dependence of maximal incident angle θimax on the slanted angle α.