Frontiers of Optoelectronics, Volume. 8, Issue 4, 445(2015)

Simulation study on the active layer thickness and the interface of a-IGZO-TFT with double active layers

Xiaoyue LI, Sheng YIN*, and Dong XU
Author Affiliations
  • School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
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    Xiaoyue LI, Sheng YIN, Dong XU. Simulation study on the active layer thickness and the interface of a-IGZO-TFT with double active layers[J]. Frontiers of Optoelectronics, 2015, 8(4): 445

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    Paper Information

    Category: RESEARCH ARTICLE

    Received: Jun. 6, 2014

    Accepted: Jul. 21, 2014

    Published Online: Jan. 6, 2016

    The Author Email: Sheng YIN (yinhust@hust.edu.cn)

    DOI:10.1007/s12200-014-0451-1

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