Fig. 1. Schematic diagrams of SiC nanowire-GO film-SiC nanowire structure and femtosecond laser assisted connection. (a) Structure of SiC nanowire-GO film-SiC nanowire was prepared by dry transfer method; (b) schematic diagram of GO nano film reduction by femtosecond laser irradiation

Fig. 2. Chemical and electrical characterization of SiC nanowire-GO film-SiC nanowire structure. (a) Structure of SiC nanowire-SiC nanowire covered by GO translucent film under optical microscope; (b) SEM image of SiC nanowire-GO film-SiC nanowire; (c) TEM image of nanowire network composed of SiC nanowire and GO film; (d) high resolution TEM image of SiC nanowires; (e) XRD image of SiC nanowires; (f) electrical characterization of n-type SiC nanowire; (g) SEM image of the coating formed by the few layer GO film and SiC nanowire; (h) schematic diagram of the current path of SiC nanowire-GO film-SiC nanowire structure

Fig. 3. Electrical characterization of SiC nanowire-GO film-SiC nanowire structure before and after femtosecond laser irradiation. (a) GO under two SiC nanowires; (b) GO in the middle of two SiC nanowires; (c) GO above two SiC nanowires

Fig. 4. Changes of electrical conductivity of GO films irradiated by femtosecond laser with different power densities

Fig. 5. Changes of electrical response of SiC nanowire-GO film irradiated by femtosecond laser at different power densities

Fig. 6. Field distribution of SiC nanowire-GO film structure under laser irradiation. (a) Field distribution for Go film under SiC nanowire; (b) field distribution for SiC nanowire wrapped by GO film; (c) field distribution for SiC nanowire-GO film structure under the big light field

Fig. 7. Device application of SiC nanowire network with GO films. (a) Photoelectric response characteristics of SiC nanowire network ultraviolet sensors; (b) physical view of SiC nanowire network flexible transparent conductive films; (c) electrical characterization of SiC nanowire network flexible transparent conductive films