O-band low loss and polarization insensitivity bilayer and double-tip edge coupler

Yuanjian Wan; Yu Zhang; Jian Wang

doi:10.1117/1.APN.4.2.026004

Advanced Photonics Nexus, Volume. 4, Issue 2, 026004(2025)

O-band low loss and polarization insensitivity bilayer and double-tip edge coupler

Yuanjian Wan^1,2, Yu Zhang^1,2、*, and Jian Wang^1,2、*

¹Huazhong University of Science and Technology, Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Wuhan, China

²Optics Valley Laboratory, Wuhan, China

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Fig. 1. (a) Schematic of the bilayer and double-tip edge coupler. (b) Cross-sectional image of the edge coupler. (c) Cross-sectional image of the height transition process.

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Fig. 2. Cross-sectional images of the double-tip waveguide and TE and TM mode field distributions. (a) 220 nm high. (b) 150 nm high.

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Fig. 3. Calculated mode overlap as functions of (a) $W_{tip}$ and (b) $g$ .

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Fig. 4. Mode field propagation at 1310 nm for different polarizations of the input light source. (a) TE mode. (b) TM mode.

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Fig. 5. Simulated coupling losses for different polarizations of different structures.

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Fig. 6. (a) Optical microscope images of the diced single chip. (b)–(d) SEM images of the fabricated edge coupler.

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Fig. 7. Test device of the edge coupling.

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Fig. 8. Coupling losses of the edge coupler in simulation and measurement.

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Table 1. Parameters of the bilayer and double-tip edge coupler.
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Table 1. Parameters of the bilayer and double-tip edge coupler.
Parameter $W_{0}$ $W_{1}$ $W_{m 1}$ $W_{m 2}$ $W_{tip}$ $d$ $g$ $L_{m}$ $L_{t}$ $L_{1}$ $L_{2}$ $L_{3}$
Value ( $μ m$ ) 0.45 0.735 1.5 1.6 0.13 0.415 1.6 2.5 8 25 20 23

Table 2. Performance of O-band silicon edge couplers.

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Table 2. Performance of O-band silicon edge couplers.


Year	Platform	Structure	Coupling loss/facet (dB) (for ${TE}_{0} / {TM}_{0}$ modes, respectively)	PDL	Ref.
2022	SiN-on-SOI	SiN-Si hybrid edge coupler	1.6 dB (TE)/1.9 dB (TM) @ $4 μ m$ MFD	0.3 dB	17
2019	SOI	Trident shape with SWG buffer	2 dB (TE)/—@ $4 μ m$ MFD	—	20
2019	SOI	Si with air trench	2 dB (TE)/—@ $9 μ m$ MFD	—	21
2019	SOI	Si with V-grooves and SWG	0.7 dB (TE)/1.4 dB (TM) @ $9 μ m$ MFD	0.7 dB	22
2017	SiN-on-SOI	SiN-Si hybrid edge coupler	2.8 dB (TE)/3 dB (TM) @ $9 μ m$ MFD	0.2 dB	23
This work	SOI	Bilayer and double-tip edge coupler	1.52 dB (TE)/2 dB (TM) @ $4 μ m$ MFD	0.48 dB	—

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Yuanjian Wan, Yu Zhang, Jian Wang, "O-band low loss and polarization insensitivity bilayer and double-tip edge coupler," Adv. Photon. Nexus 4, 026004 (2025)

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