The short-wave infrared band contains a variety of spectral information of the target and has good atmospheric transmission characteristics, which is one of the important bands for optoelectronic detection, laser communication and other applications. Silicon-based optoelectronic devices have the advantages of low power consumption and high bandwidth, but their spectral response range is limited to the visible band, making it difficult to directly carry out high-response photodetection in the short-wave infrared band. Therefore, the photoelectric integration of high short-wave infrared absorption ability of indium gallium arsenic (InGaAs) materials and silicon (Si) materials, and the development of a new type of high-sensitivity photodetector has become the hot direction of the current research. As the core technology of ultra-high-speed, low-power, miniaturized semiconductor optoelectronic devices, optoelectronic integration technology has strongly supported the leapfrog development of a new generation of information technology, such as big data, cloud computing, and the Internet of Things. By combing the domestic and international research and development history, current status, and future trends of optoelectronic integration technology, focusing on InGaAs-Si based photodetectors, the material epitaxial growth, flip chip integration, chip/wafer bonding, and other new optoelectronic integration processes were discussed. The characteristics, advantages, shortcomings, and usage scenarios of different optoelectronic integration technologies were analyzed, and the future development direction of optoelectronic integration technologies was envisioned.