408 Gbit/s PAM-8 sidewall-doped germanium–silicon photodetector

Xiao Hu; Dingyi Wu; Ye Liu; Daigao Chen; Lei Wang; Xi Xiao; Shaohua Yu

doi:10.1364/PRJ.488166

Photonics Research, Volume. 11, Issue 6, 961(2023)

408 Gbit/s PAM-8 sidewall-doped germanium–silicon photodetector

Xiao Hu^1,2, Dingyi Wu², Ye Liu², Daigao Chen^1,2, Lei Wang^1,2,3, Xi Xiao^1,2,3、*, and Shaohua Yu^1,2,3

¹State Key Laboratory of Optical Communication Technologies and Networks, Wuhan Research Institute of Posts & Telecommunications (WRI), Wuhan 430074, China

²National Information Optoelectronics Innovation Center, Wuhan 430074, China

³Peng Cheng Laboratory, Shenzhen 518055, China

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Xiao Hu, Dingyi Wu, Ye Liu, Daigao Chen, Lei Wang, Xi Xiao, Shaohua Yu, "408 Gbit/s PAM-8 sidewall-doped germanium–silicon photodetector," Photonics Res. 11, 961 (2023)

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Paper Information

Category: Integrated Optics

Received: Feb. 20, 2023

Accepted: Apr. 6, 2023

Published Online: Jun. 8, 2023

The Author Email: Xi Xiao (xiaoxi@noeic.com)

DOI:10.1364/PRJ.488166

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology