Chinese Journal of Lasers, Volume. 52, Issue 2, 0203102(2025)

Development of 1064 nm Energy Attenuation Device for Laser Guidance System

Jing Zhang1,2, Guiping Liu1,2、*, Xiuhua Fu1,2, Zhaowen Lin2,3, Yonggang Pan2,3, Ben Wang2,3, and Fei Yang4
Author Affiliations
  • 1College of Optoelectronic Engineering, Changchun University of Science and Technology, Changchun 130022,Jilin , China
  • 2Zhongshan Research Institute, Changchun University of Science and Technology, Zhongshan 528436, Guangdong , China
  • 3Zhongshan Jilian Optoelectronic Technology Co., Ltd., Zhongshan 528436, Guangdong, C hina
  • 4Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, Jilin , China
  • show less
    Figures & Tables(18)
    Technical index requirements of light filter device before energy attenuation
    Sensitivity values of different spacer materials
    Theoretical spectral curve of 1064 nm filter film with single-sided design
    Theoretical spectral curve of broadband cut-off film with single-sided design
    Theoretical spectral curve of 1064 nm narrowband filter device with double-sided film design
    Refractive receiving optical system
    Reflectivity curves of different metals with same transmittance
    Comparison between designed curve and theoretical curve. (a) Narrowband filter film; (b) broadband cut-off film
    Test curve of high-transmittance filter device after Tooling value correction
    Refractive index and extinction coefficient versus film thickness
    Comparison of transmittance values of Cr films with different thicknesses before and after attenuation
    Actual transmittance versus Cr film thickness
    Transmittance curves before and after deposition of 25 nm thick Cr film
    Spectra of sample before and after environmental testing
    • Table 1. Preparation process parameters of narrow-band filter film and broadband cut-off film

      View table

      Table 1. Preparation process parameters of narrow-band filter film and broadband cut-off film

      Material

      Background

      vacuum /(10-4 Pa)

      Substrate

      temperature /℃

      Ion source

      current /mA

      Deposition

      rate /(nm/s)

      Electron beam current /mA
      SiO272209500.8170
      Ta2O572209000.4520
    • Table 2. Preparation process parameters of metal attenuation films

      View table

      Table 2. Preparation process parameters of metal attenuation films

      Material

      Background

      vacuum /(10-4 Pa)

      Substrate

      temperature /℃

      Deposition

      rate /(nm/s)

      Electron beamcurrent /mA

      Film

      thickness /nm

      Cr3.4220.2335
      10
      15
      20
      30
      SiO方正汇总行23.4220.69050
    • Table 3. Comparison of theoretical attenuation transmittance and actual attenuation transmittance

      View table

      Table 3. Comparison of theoretical attenuation transmittance and actual attenuation transmittance

      Cr film thickness /nm

      Initial transmittance /

      %

      Theoretical transmittance /

      %

      Actual transmittance /

      %

      599.1838.1435.74
      1099.0522.6420.52
      1599.2116.7615.18
      2098.9412.4411.36
      3099.139.088.62
    • Table 4. Environmental testing results

      View table

      Table 4. Environmental testing results

      TestResult
      SoakingPass
      AdhesionPass
      HumidityPass
      TemperaturePass
    Tools

    Get Citation

    Copy Citation Text

    Jing Zhang, Guiping Liu, Xiuhua Fu, Zhaowen Lin, Yonggang Pan, Ben Wang, Fei Yang. Development of 1064 nm Energy Attenuation Device for Laser Guidance System[J]. Chinese Journal of Lasers, 2025, 52(2): 0203102

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Thin Films

    Received: Jun. 4, 2024

    Accepted: Jul. 16, 2024

    Published Online: Jan. 20, 2025

    The Author Email: Liu Guiping (15504495865@163.com)

    DOI:10.3788/CJL240931

    CSTR:32183.14.CJL240931

    Topics