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Chinese Journal of Lasers, Volume. 46, Issue 8, 0808001(2019)

Nonlinear Laser-Limiting Method Based on One-Dimensional Photonic Crystals with Double Defects

Jialing Shen1, Yuangang Lu1、*, Haixia Ma1, Jiming Wang1, Feng Xu2, and Dunwen Zuo2
Author Affiliations
  • 1 Department of Applied Physics, College of Science, Nanjing University of Aeronautics and Astronautics,Nanjing, Jiangsu 211106, China
  • 2 College of Mechanical and Electrical Engineering, Nanjing University of Aeronautics and Astronautics,Nanjing, Jiangsu 211106, China
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    AbstractGet PDF(in Chinese)
    Figures&Tables (9)
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    References (36)
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    Figures & Tables(9)
    Schematic of one-dimensional asymmetric photonic crystal structure

    Fig. 1. Schematic of one-dimensional asymmetric photonic crystal structure

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    Defect mode position versus optical power density of 532 nm laser

    Fig. 2. Defect mode position versus optical power density of 532 nm laser

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    Defect mode position versus optical power density of 1064 nm laser

    Fig. 3. Defect mode position versus optical power density of 1064 nm laser

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    Relationship between optical transmittance of 532 nm laser and optical power density of incident laser for each structure

    Fig. 4. Relationship between optical transmittance of 532 nm laser and optical power density of incident laser for each structure

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    Relationship between optical transmittance of 1064 nm laser and optical power density of incident laser for each structure

    Fig. 5. Relationship between optical transmittance of 1064 nm laser and optical power density of incident laser for each structure

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    Effects of thickness fluctuations (within ±5.0 nm) of other two dielectric layers on peak transmittance when thickness of one dielectric layer is constant. (a)Thickness of dielectric layer A is 184.1 nm; (b) thickness of dielectric layer B is 92.0 nm; (c) thickness of dielectric layer C is 138.1 nm

    Fig. 6. Effects of thickness fluctuations (within ±5.0 nm) of other two dielectric layers on peak transmittance when thickness of one dielectric layer is constant. (a)Thickness of dielectric layer A is 184.1 nm; (b) thickness of dielectric layer B is 92.0 nm; (c) thickness of dielectric layer C is 138.1 nm

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    Effects of thickness fluctuations (within ±5.0 nm) of other two dielectric layers on peak transmittance when thickness of one dielectric layer is constant. (a) Thickness of dielectric layer A is 149.3 nm; (b) thickness of dielectric layer B is 74.7 nm; (c) thickness of dielectric layer C is 112.0 nm

    Fig. 7. Effects of thickness fluctuations (within ±5.0 nm) of other two dielectric layers on peak transmittance when thickness of one dielectric layer is constant. (a) Thickness of dielectric layer A is 149.3 nm; (b) thickness of dielectric layer B is 74.7 nm; (c) thickness of dielectric layer C is 112.0 nm

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    • Table 1. Statistical results of transmittance varying with dielectric layer thickness

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      Table 1. Statistical results of transmittance varying with dielectric layer thickness

      LayerThickness-determined dielectric layer
      ABC
      Range of variablethickness /nm±0.5±0.5±0.5

    • Table 2. Statistical results of transmittance varying with dielectric layer thickness

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      Table 2. Statistical results of transmittance varying with dielectric layer thickness

      LayerThickness-determined dielectric layer
      ABC
      Range of variablethickness /nm±2.0±1.5±1.5
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    Jialing Shen, Yuangang Lu, Haixia Ma, Jiming Wang, Feng Xu, Dunwen Zuo. Nonlinear Laser-Limiting Method Based on One-Dimensional Photonic Crystals with Double Defects[J]. Chinese Journal of Lasers, 2019, 46(8): 0808001

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    Paper Information

    Category: nonlinear optics

    Received: Jan. 7, 2019

    Accepted: Feb. 18, 2019

    Published Online: Aug. 13, 2019

    The Author Email: Yuangang Lu (luyg@nuaa.edu.cn)

    DOI:10.3788/CJL201946.0808001

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology