Acta Physica Sinica, Volume. 69, Issue 13, 136103-1(2020)
Figures & Tables(18)
Fig. 2. α particle distribution on the silicon surface of the 65 nm SRAM.
Fig. 3. α particle distribution on the silicon surface of the 90 nm SRAM.
Fig. 5. Reverse analysis results of the 65 nm SRAM: (a) Cross section; (b) memory area image.
Fig. 6. TRIM simulation results: (a) The propagation trajectory of alpha particles in the device; (b) the alpha particle trajectory from the cross-sectional view of the device (the initial incident position of the particle is at the zero center).
Fig. 8. Deposited energy spectra in sensitive regions of devices at different incident angles.
Fig. 9. Relationship between LET value and energy of α particle in silicon material.
Fig. 10. Relationship between single event upset cross section and critical energy at different incident angles.
Fig. 11. Single event upset cross section at different incident angles.
Table 1.
Parameters of the radioactive source being used.
使用的放射源参数
View tableView in ArticleTable 1.
Parameters of the radioactive source being used.
使用的放射源参数
α粒子源 Am-241 放射率/粒子·2π–1·min–1 5.73 × 105 尺寸 圆柱体, Φ18 mm, 1 mm厚
Table 2.
Parameters of the devices under test.
被测器件参数
View tableView in ArticleTable 2.
Parameters of the devices under test.
被测器件参数
器件类型 型号 厂商 工艺尺寸/nm 测试容量/Mb 工作电压/V 硅片尺寸 DDR-II SRAM CY7C1318 CYPRESS 65 1.125 1.8 5 mm × 8 mm QDR-II SRAM CY7C1412 CYPRESS 65 18 1.8 5 mm × 8 mm SRAM CY7C1019D CYPRESS 90 1 3.3 2 mm × 2 mm
Table 3.
Test results of SEU cross section.
SEU截面测试结果
View tableView in ArticleTable 3.
Test results of SEU cross section.
SEU截面测试结果
器件 测试容量/Mb 粒子注量率/cm–2·s–1 测试时长 SEU数量 SEU截面/cm2·bit–1 CY7 C1318(65 nm) 1.125 1.33 × 103 7 min 52 s 204 2.76 × 10–10 CY7 C1412(65 nm) 18 1.33 × 103 3 min 41 s 1613 2.91 × 10–10 CY7 C1019 D(90 nm) 1 7.42 × 102 16 h 127 2.83 × 10–12
Table 4.
The α particle emissivity level and corresponding soft error rate.
α粒子发射率等级及对应的软错误率
View tableView in ArticleTable 4.
The α particle emissivity level and corresponding soft error rate.
α粒子发射率等级及对应的软错误率
α粒子发射率等级 发射率/cm–2·h–1 65 nm SRAM软错误率/FIT·Mb–1 90 nm SRAM软错误率/FIT·Mb–1 ULA ~0.001 3.03 × 102 2.97 Low Alpha (LA) ~0.01 3.03 × 103 29.7 Uncontrolled Alpha ~20 6.06 × 106 5.94 × 104
Table 5.
Soft error rates of the 65 nm SRAM at the experimental site with an altitude of 4300 m and sea level of Beijing city being used. The contribution rates of α particle, high energy neutron and thermal neutron are analyzed, respectively.
65 nm SRAM在4300 m海拔试验地点及北京海平面使用时的软错误率及α粒子、高能中子和热中子贡献占比
View tableView in ArticleTable 5.
Soft error rates of the 65 nm SRAM at the experimental site with an altitude of 4300 m and sea level of Beijing city being used. The contribution rates of α particle, high energy neutron and thermal neutron are analyzed, respectively.
65 nm SRAM在4300 m海拔试验地点及北京海平面使用时的软错误率及α粒子、高能中子和热中子贡献占比
粒子种类 4300 m海拔处的软错误率/FIT·Mb–1 占比(4300 m海拔) 北京海平面处的软错误率/FIT·Mb–1 占比(北京海平面) 全部 2356 100% 429 100% α粒子 303 12.86% 303 70.63% 高能中子 2053 87.14% 126 29.37% 热中子 0 0% 0 0%
Table 6. [in Chinese]
View tableView in ArticleTable 6. [in Chinese]
器件 存储单元尺寸 灵敏区尺寸 灵敏区厚度/μm 重离子LET阈值/ MeV·cm2·mg-1 临界能量/keV 65 nm SRAM 1 μm × 0.5 μm 0.2 μm × 0.19 μm 0.45 0.22[ 19 ]22.5[ 19 ]
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Zhan-Gang Zhang, Bing Ye, Qing-Gang Ji, Jin-Long Guo, Kai Xi, Zhi-Feng Lei, Yun Huang, Chao Peng, Yu-Juan He, Jie Liu, Guang-Hua Du.
Paper Information
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Received: Nov. 26, 2019
Accepted: --
Published Online: Jan. 4, 2021
The Author Email: Huang Yun (yunhuang@ceprei.com)
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