Fig. 1. The fabrication process of the Al-GO-lrGO planar memristor

Fig. 2. The Al-GO-lrGO structure memristor. (a) Physical image; (b) cross-sectional SEM of GO; (c) AFM of GO surface

Fig. 3. Structural characterization results. (a) SEM image of GO; (b) SEM image of lrGO; (c) SEM image of GO after electrical testing; (d) EDS image of GO; (e) EDS image of lrGO; (f) Raman spectra of GO, lrGO, and GO_test; (g) XPS spectra of GO, lrGO, and GO_test

Fig. 4. Low voltage test. (a) IV curve of the device under low-voltage scanning; (b) 3D plot of IV curves for 150 cycles of scanning; (c) distribution of high and low resistance states for 150 cycles of scanning; (d) high-resolution XPS O1s spectrum of GO; (e) switching mechanism of the device under low-voltage conditions

Fig. 5. High voltage test.(a) IV curve of the high-voltage test; (b) IV curve of 20 cycles of scanning; (c) surface changes of the Al electrode during the high-voltage test process