Research Progress on High-k Gate Dielectrics Materials for 4H-SiC Based Power Devices

LIU Shuai; SONG Lihui; YANG Deren; PI Xiaodong

Journal of Synthetic Crystals, Volume. 53, Issue 12, 2027(2024)

LIU Shuai1...2, SONG Lihui1,2,*, YANG Deren1,2, and PI Xiaodong12 |Show fewer author(s)

¹State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

²Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, China

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LIU Shuai, SONG Lihui, YANG Deren, PI Xiaodong. Research Progress on High-k Gate Dielectrics Materials for 4H-SiC Based Power Devices[J]. Journal of Synthetic Crystals, 2024, 53(12): 2027

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