Acta Optica Sinica, Volume. 45, Issue 17, 1720020(2025)

Terahertz Noise Generation Technologies (Invited)

Yiren Shen1,2,3, Pu Li1,2,3, and Yuncai Wang1,2,3、*
Author Affiliations
  • 1Institute of Advanced Photonics Technology, School of Information Engineering, Guangdong University of Technology, Guangdong 510006, Guangzhou , China
  • 2Key Laboratory of Photonic Technology for Integrated Sensing and Communication, Ministry of Education, Guangdong University of Technology, Guangdong 510006, Guangzhou , China
  • 3Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong University of Technology, Guangdong 510006, Guangzhou , China
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    Figures & Tables(20)
    Thermodynamic noise standards. (a) Thermal noise source from Noisecom of USA[14]; (b) microwave noise standard from National Institute of Metrology, China[15]
    Test results of GaAs-based Schottky diode noise sources. (a) ENR curves of noise source from JPL of USA[16]; (b) ENR curve of noise source from NASA of USA[17]
    Test results of Si-based Schottky diode noise sources. (a) ENR curve of noise source from IEMN of France[19]; (b) ENR results of packaged noise source[21]
    Noise source from 41st Institute of China Electronics Technology Group Corporation[11]. (a) Photograph of products; (b) ENR curve of noise source
    Schematic diagram of noise generation based on radio-frequency photon mixing
    Test results of noise generated by radio-frequency photonic technology. (a) Noise results of 295‒355 GHz generated by NTT from Japan[27]; (b) noise results of 260‒320 GHz generated by IEMN from France[29]
    Comparison of terahertz noise ENR results based on electronics and radio-frequency photonic technology[30]
    Terahertz noise generated by multi-beam incoherent light mixing. (a) Terahertz noise in 130‒170 GHz generated by three-beam incoherent light mixing[32]; (b) terahertz noise in 280‒380 GHz generated by incoherent light beams based on Vernier effect[33]
    Terahertz noise scheme generated by dual-mode chaotic laser[35]. (a) Structure diagram of dual-mode chaotic laser chip; (b) micrograph of dual-mode chaotic laser chip; (c) output spectrum of dual-mode chaotic laser; (d) experimental measurement results of dual-mode chaotic laser in on and off states
    Schematic diagram of terahertz noise generated by multi-beam mixing[36]
    Simulation results of relationship between the number of incoherent light beams and noise power spectrum[36]. (a) Spectra of 6-beam incoherent light; (b) noise power spectra of 6-beam incoherent light mixing; (c) spectra of 2-beam incoherent light; (d) noise power spectra of 2-beam incoherent light mixing
    Noise generation scheme in comb-shaped chaotic light mixing based on Vernier-effect[37]. (a) Experimental setup diagram; (b) noise power spectra
    Radio-frequency photonic terahertz noise source prototype in range of 200‒390 GHz[38]. (a) System structure diagram of prototype; (b) photograph of prototype
    Measured results of 200‒390 GHz terahertz noise generator prototype[38]. (a) Input spectrum and terahertz noise power spectrum; (b) results of terahertz noise ENR and corresponding equivalent noise temperature
    Stability and repeatability test results of 200‒390 GHz terahertz noise generator prototype[38]. (a) Stability test results of 5 h operation; (b) repeatability test results of 10 times power on/off
    Typical photodetector products. (a) Commercial 145 GHz PIN-PD from HHI, Germany[42]; (b) WR-3 waveguide output UTC-PD from NTT, Japan[44]; (c) WR-5 waveguide output UTC-PD from Tsinghua University, China[47]
    Terahertz signal generated by photoconductive antenna under incoherent light excitation[54]. (a) Spectrum of SLD; (b) terahertz signal generated by photoconductive antenna
    Experimental results of terahertz noise generation based on photoconductive antenna. (a) Schematic diagram of experimental setup; (b) ENR curve at 75‒170 GHz; (c) ENR curve at 170‒400 GHz
    • Table 1. Summary of major solid-state noise source products and their operating parameters

      View table

      Table 1. Summary of major solid-state noise source products and their operating parameters

      InstitutionModelCore deviceFrequency /GHzENR /dBFlatness /dBRef. No
      CEYEAR, China16603-seriesGaAs Schottky diode50‒1107‒23±8[11]
      VDI, USAWR3.1NSGaAs Schottky diode220‒3306±2[12]
      IEMN, FranceSi Schottky diode140‒17020‒24±2[20]
      ELVA-1, Republic of EstoniaISSN-03IMPATT220‒33036‒56±10[25]
    • Table 2. Summary of terahertz noise generation devices based on radio-frequency photonic techniques and performance indexes

      View table

      Table 2. Summary of terahertz noise generation devices based on radio-frequency photonic techniques and performance indexes

      InstitutionLight sourceCore deviceFrequency /GHzENR /dBFlatness /dBRef. No
      NTT, JapanASEUTC-PD295‒35520-[27]
      CNRS, FranceASEGe-on-Si PD75‒11030±5[28]
      IEMN, FranceASEUTC-PD260‒32028.5±2.5[29]
      GDUT, ChinaASEUTC-PD130‒17030±2.25[32]
      GDUT, ChinaSLDUTC-PD280‒38021±3.1[33]
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    Yiren Shen, Pu Li, Yuncai Wang. Terahertz Noise Generation Technologies (Invited)[J]. Acta Optica Sinica, 2025, 45(17): 1720020

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    Paper Information

    Category: Optics in Computing

    Received: May. 30, 2025

    Accepted: Jul. 7, 2025

    Published Online: Sep. 2, 2025

    The Author Email: Yuncai Wang (wangyc@gdut.edu.cn)

    DOI:10.3788/AOS251180

    CSTR:32393.14.AOS251180

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