Fig. 1. （a）Process flow of the device，（b）schematic diagram of the device structure，（c）Optical micrograph of the device，（d）AFM test photos，（e）Schematic diagram of the photo response of the device

Fig. 2. （a）Output characteristic curves of the device under a gate voltage of 0 V，±1 V and ±3 V，（b-c）the transfer cursves of the device under a bias voltage of 0.1 V，（d-f）the energy band diagrams of CIPS polarization in Fresh， P_up and P_down states.

Fig. 3. （a）the distribution of the terahertz electric field of the bow-tie antenna，（b）relationship of (1/σ)dσ/dVg and gate voltage，（c）relationship of the device photocurrent and gate voltage at 0.12 THz，（d）relationship of the device response rate and gate voltage at 0.12 THz，（e）relationship of the device response rate and gate voltage at 0.29 THz，（f）Time-resolved light response waveform

Fig. 4. （a）relationship of the device photocurrent and bias voltage at 0.12 THz and 0.29 Thz，（b）relationship of the device response rate and bias voltage at 0.12 THz and 0.29 THz，（c）the response time of the device，（d）relationship of the device photocurrent and photo power at 0.04 THz，（e）noise spectra of the device，（f）relationship of the NEP and bias voltage at 0.12 THz and 0.29 THz，（g）Schematic diagram of the terahertz transmission scanning imaging system，（h）Optical image of article and its THz imaging.