INFRARED, Volume. 46, Issue 8, 1(2025)

Research Progress on Mercury-Rich Vertical Liquid Phase Epitaxy Technology for HgCdTe in the 11th Research Institute of CETC

Fei HAO, Wei-lin SHE, Hai-yan YANG, Yi-lin HU, Xiao-shuai XING, Mei-hua YANG, Wei-rong XING, and Hao SUN
Author Affiliations
  • North China Research Institute of Electro-Optics, Beijing 100015, China
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    References(4)

    [2] [2] Hess G T, Sanders T J. HgCdTe double layer heterojunction detector device[C].SPIE, 2000,4028: 353-364.

    [3] [3] Wenus J, Rutkow S J, Rogalski A. Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes[C].SPIE, 2001,4288: 335-344.

    [4] [4] Vilela M F, Hogan J, Brian T F. Infinite-Melt Vertical Liquid-Phase Epitaxy of HgCdTe from Hg Solution: from VLWIR to SWIR[J].Journal of Electronic Materials, 2022,51(9): 4731-4741.

    [5] [5] Fulk C, Radford W, Buell D, et al. State-of-the-Art HgCdTe at Raytheon Vision Systems[J].Journal of Electronic Materials, 2015,44(9): 2977-2980.

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    HAO Fei, SHE Wei-lin, YANG Hai-yan, HU Yi-lin, XING Xiao-shuai, YANG Mei-hua, XING Wei-rong, SUN Hao. Research Progress on Mercury-Rich Vertical Liquid Phase Epitaxy Technology for HgCdTe in the 11th Research Institute of CETC[J]. INFRARED, 2025, 46(8): 1

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    Paper Information

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    Received: Nov. 24, 2024

    Accepted: Sep. 12, 2025

    Published Online: Sep. 12, 2025

    The Author Email:

    DOI:10.3969/j.issn.1672-8785.2025.08.001

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