[1] [1] Sanchez D, Cerutti L, Tournie E. Mid-IR GaSb-based bipolar cascade VCSELs[J]. IEEE Photonics Technology Letters, 2013, 25(9): 882–884.

[2] [2] Bachmann A, Kashani-Shirazi K, Arafin S, et al. GaSb-based VCSEL with buried tunnel junction for emission around 2.3μm[J]. IEEE Journal of Selected Topics in Quantum Elec-tronics, 2009, 15(3): 933–940.

[3] [3] Bachmann A, Arafin S, Kashani-Shirazi K, et al. Long wave-length electrically pumped GaSb-based buried tunnel junction VCSELs[J]. Physics Procedia, 2010, 3(2): 1155–1159.

[4] [4] Laaroussi Y, Sanchez D, Cerutti L, et al. Oxide-confined mid-infrared VCSELs[J]. Electronics Letters, 2012, 48(25): 1616–1618.

[5] [5] Chiu T H, Tsang W T, Ditzenberger J A, et al. Room-temperature operation of InGaAsSb/AlGaSb double heterostructure laser near 2.2 μm prepared by molecular beam epitaxy[J]. Applied Physics Letters, 1986, 49(17): 1051–1052.

[6] [6] Tian Chaoqun. Etching porcess of mid-infrared antimonide laser[D]. Changchun: Changchun University of Science and Technology, 2013.

[7] [7] Zhang Xiu, Bo Baoxue, Gao Xin, et al. Study and design of the characteristics of ridge waveguide semiconducter lasers[J]. Journal of Changchun University of Science and Technology, 2011, 34(2): 56–58.

[8] [8] Dong Ruijun. Study of the etching technology for GaSb-based laser[D]. Changchun: Changchun University of Science and Technology, 2012.

[9] [9] Study of mesa etching for a InAs/GaSb superlattice infrared detector[J]. Micronanoelectronic Technology, 2008, 45(5): 298–301.

[10] [10] Zhang Xiong. Investigation of devices and physics for anti-monide lasers and photodiodes in mid-infrared[D]. Shanghai: Shanghai Institute of Microsystem and Information Technology Research Institute, 2004.

[11] [11] Tang Tian. Study on MBE growth and physics of antimonide laser and detector materials[D]. Shanghai: Shanghai Institute of Microsystem and Information Technology Research Institute, 2005.

[12] [12] Buglass J G. McLean T D, Parker D G. A controllable etchant for fabrication of gasb devices[J]. Journal of the Electrochemical Society, 1986, 133(12): 2565–2567.

[13] [13] Kodarna M, Hasegawa J, Kimata M. Influence of substrate preparation on the morphology of GaSb films grown by mo-lecular beam epitaxy[J]. Journal of the Electrochemical Society, 1985, 132(3): 659–662.

[14] [14] Nie Jing, Shi Tielin, Liao Guanglian, et al. Application of Cr mask in Si wet etching[J]. Semiconductor Technology, 2005, 30(12): 26–28.

[15] [15] Xu Zhaopeng. Study of wet chemical etching for GaAs, GaP, InP, InGaAsP, AlGaAs and InAlGaAs[J]. Research & Progress of SSE, 1996(1): 56–63.

[16] [16] Cao Xin, Thayne I. Novel high uniformity highly reproducible non-selective wet digital gate recess etch process for InP HEMTs[J]. Microelectronic Engineering, 2003, 67–68(1): 333–337.

[18] [18] Doerschel J, Geissler U. Characterization of extended defects in highly Te-doped〈111〉GaSb single crystals grown by the Czochralski technique[J]. Journal of Crystal Growth, 1992, 121(4): 781–789.

[19] [19] Zhang Xiong, Li Aizhen, Zhang Yonggang, et al. Room tem-perature AlGaAsSb/InGaAsSb 2 μm ridge-waveguide mul-ti-quantum-well lasers[J]. Chinese Journal of Rare Metals, 2004, 28(3): 574–576.

[20] [20] Duan Chenglong, Shu Fuzhang, Song Weifeng, et al. Wet etch and its uniformity technical discuss[J]. Cleaning World, 2012, 28(11): 33–36.