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Photonics Research, Volume. 6, Issue 11, 1062(2018)

Low-noise 1.3  μm InAs/GaAs quantum dot laser monolithically grown on silicon On the Cover

Mengya Liao1, Siming Chen1、*, Zhixin Liu1, Yi Wang2, Lalitha Ponnampalam1, Zichuan Zhou1, Jiang Wu1, Mingchu Tang1, Samuel Shutts3, Zizhuo Liu1, Peter M. Smowton3, Siyuan Yu2, Alwyn Seeds1, and Huiyun Liu1
Author Affiliations
  • 1Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK
  • 2State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China
  • 3Department of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, UK
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    Article index updated: Dec. 6, 2024

    Citation counts are provided from Web of Science. The counts may vary by service, and are reliant on the availability of their data.
    The article is cited by 35 article(s) from Web of Science.
    The article is cited by 3 article(s) CLP online library. (Some content might be in Chinese.)
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    Mengya Liao, Siming Chen, Zhixin Liu, Yi Wang, Lalitha Ponnampalam, Zichuan Zhou, Jiang Wu, Mingchu Tang, Samuel Shutts, Zizhuo Liu, Peter M. Smowton, Siyuan Yu, Alwyn Seeds, Huiyun Liu, "Low-noise 1.3  μm InAs/GaAs quantum dot laser monolithically grown on silicon," Photonics Res. 6, 1062 (2018)

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    Paper Information

    Category: Silicon Photonics

    Received: Aug. 8, 2018

    Accepted: Sep. 13, 2018

    Published Online: Nov. 11, 2018

    The Author Email: Siming Chen (siming.chen@ucl.ac.uk)

    DOI:10.1364/PRJ.6.001062

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology