Growth and Defects of Novel Substrate Material LiAlO<sub>2</sub>Crystal

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Acta Optica Sinica, Volume. 18, Issue 3, 380(1998)

Growth and Defects of Novel Substrate Material LiAlO₂Crystal

[in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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References(3)

[1] [1] N. Grandjean, J. Massies, Leroux. Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers. Appl. Phys. Lett., 1997, 68(7): 2071～2073

[2] [2] F. A. Ponce, D. P. Bour, W. Gotz et al.. Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition. Appl. Phys. Lett., 1997, 68(7): 917～919

[3] [3] B. Cockayane, B. Lent. The Czochraslki growth of single crystal lithium aluminate, LiAlO2. J. Cryst. Growth, 1981, 54: 546～550

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Growth and Defects of Novel Substrate Material LiAlO₂Crystal[J]. Acta Optica Sinica, 1998, 18(3): 380

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Paper Information

Category: Materials

Received: Jul. 2, 1997

Accepted: --

Published Online: Oct. 18, 2006

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Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology