Chinese Journal of Liquid Crystals and Displays, Volume. 36, Issue 12, 1623(2021)
Effect of oxygen to argon ratio on the electrical performance of Ta2O5 gate dielectric thin film transistor
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WANG Chao, LIU Fu-nan, YANG Fan, ZHANG Han-yue, YANG Xiao-tian. Effect of oxygen to argon ratio on the electrical performance of Ta2O5 gate dielectric thin film transistor[J]. Chinese Journal of Liquid Crystals and Displays, 2021, 36(12): 1623
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Received: Aug. 8, 2021
Accepted: --
Published Online: Jan. 1, 2022
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