Chinese Journal of Liquid Crystals and Displays, Volume. 36, Issue 12, 1623(2021)

Effect of oxygen to argon ratio on the electrical performance of Ta2O5 gate dielectric thin film transistor

WANG Chao1,2, LIU Fu-nan1, YANG Fan1,2, ZHANG Han-yue1, and YANG Xiao-tian2,3
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    WANG Chao, LIU Fu-nan, YANG Fan, ZHANG Han-yue, YANG Xiao-tian. Effect of oxygen to argon ratio on the electrical performance of Ta2O5 gate dielectric thin film transistor[J]. Chinese Journal of Liquid Crystals and Displays, 2021, 36(12): 1623

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    Paper Information

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    Received: Aug. 8, 2021

    Accepted: --

    Published Online: Jan. 1, 2022

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    DOI:10.37188/cjlcd.2021-0211

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