Acta Optica Sinica, Volume. 40, Issue 5, 0514002(2020)
Damage Characteristics of Three-Junction GaAs Cell Under Combined Pulse Laser Irradiation
Fig. 1. Schematic diagram for three-junction GaAs solar cell under laser irradiation
Fig. 2. Maximum temperature of solar cell as a function of time when action time delay of nanosecond laser is 0.3 ms. (a) Whole curves; (b)(c) partial enlarged details
Fig. 3. Spatial distribution of temperature of solar cell when action time delay of nanosecond laser is 0.3 ms. (a) Radial distribution; (b) axial distribution and inset is partial detail
Fig. 4. Spatial distribution of hoop stress. (a) Radial and (b) axial distributions before nanosecond laser irradiation; (c) radial and (d) axial distributions after nanosecond laser irradiation at delay time of 0.3 ms
Fig. 5. Maximum temperature of solar cell as a function of time with different delay time. (a) Whole curves; (b)(c) partial details
Fig. 6. Spatial distribution of temperature with different delay time. (a) Radial distribution; (b) axial distribution and inset is partial detail
Fig. 7. Spatial distribution of hoop stress with different delay time. (a)(c) Radial distributions; (b)(d) axial distributions
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Lei Qi, Rongzhu Zhang. Damage Characteristics of Three-Junction GaAs Cell Under Combined Pulse Laser Irradiation[J]. Acta Optica Sinica, 2020, 40(5): 0514002
Category: Lasers and Laser Optics
Received: Aug. 8, 2019
Accepted: Nov. 11, 2019
Published Online: Mar. 10, 2020
The Author Email: Rongzhu Zhang (zhang_rz@scu.edu.cn)