Acta Optica Sinica, Volume. 40, Issue 5, 0514002(2020)

Damage Characteristics of Three-Junction GaAs Cell Under Combined Pulse Laser Irradiation

Lei Qi and Rongzhu Zhang*
Author Affiliations
  • College of Electronics and Information Engineering, Sichuan University, Chengdu, Sichuan 610064, China
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    Figures & Tables(8)
    Schematic diagram for three-junction GaAs solar cell under laser irradiation
    Maximum temperature of solar cell as a function of time when action time delay of nanosecond laser is 0.3 ms. (a) Whole curves; (b)(c) partial enlarged details
    Spatial distribution of temperature of solar cell when action time delay of nanosecond laser is 0.3 ms. (a) Radial distribution; (b) axial distribution and inset is partial detail
    Spatial distribution of hoop stress. (a) Radial and (b) axial distributions before nanosecond laser irradiation; (c) radial and (d) axial distributions after nanosecond laser irradiation at delay time of 0.3 ms
    Maximum temperature of solar cell as a function of time with different delay time. (a) Whole curves; (b)(c) partial details
    Spatial distribution of temperature with different delay time. (a) Radial distribution; (b) axial distribution and inset is partial detail
    Spatial distribution of hoop stress with different delay time. (a)(c) Radial distributions; (b)(d) axial distributions
    • Table 1. Thermodynamic parameters of each layer for three-junction GaAs solar cell[14-17]

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      Table 1. Thermodynamic parameters of each layer for three-junction GaAs solar cell[14-17]

      Materialρ /(kg·m-3)c /(J·kg-1·K-1)K /(W·cm-1·K-1)vE /(1010 Pa)γ /(10-6 K-1)Melting point /KTensile strength /Pa
      SiO2220010001.70.168.70.519801.4×107
      GaInP2447537050.338.25.316272.5×109
      GaAs5336T--0.0337T303+15×(T/300)42.5×(300/T)1.10.318.596.4940(decomposing)1510(melting)2.3×109
      Ge(solid)Ge(liquid)5343T--0.066T6137T--0.46T303+0.0613T38060×(300/T)14+0.029T0.2610.35.61210(melting)3100(sublimation)9.3×107
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    Lei Qi, Rongzhu Zhang. Damage Characteristics of Three-Junction GaAs Cell Under Combined Pulse Laser Irradiation[J]. Acta Optica Sinica, 2020, 40(5): 0514002

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    Paper Information

    Category: Lasers and Laser Optics

    Received: Aug. 8, 2019

    Accepted: Nov. 11, 2019

    Published Online: Mar. 10, 2020

    The Author Email: Rongzhu Zhang (zhang_rz@scu.edu.cn)

    DOI:10.3788/AOS202040.0514002

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