Chinese Journal of Lasers, Volume. 51, Issue 20, 2002401(2024)

Study of Laser Ablation on 4H‑SiC by Three‑Dimensional Molecular Dynamics

Haojie An1,2, Jinshi Wang1,2, and Fengzhou Fang1,2、*
Author Affiliations
  • 1State Key Laboratory of Precision Measuring Technology & Instruments, Tianjin University, Tianjin 300072, China
  • 2Laboratory of Micro/Nano Manufacturing Technology (MNMT), School of Precision Instrument and Opto-Electronics Engineering, Tianjin University, Tianjin 300072, China
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    Figures & Tables(6)
    Schematic of TTM-MD model
    Snapshots of structure evolution under laser fluence of 200 mJ/cm2
    Lattice temperature field distributions and evolutions under different laser fluences. (a) 200 mJ/cm2; (b) 100 mJ/cm2; (c) 50 mJ/cm2; (d) 20 mJ/cm2
    Analysis of sectional structures. (a) Snapshots of sectional structure under different laser fluences; (b) removal depth and modification layer thickness versus laser fluence
    MD simulation for phase explosion. (a) Total energy during heating and cluster size distribution after explosive boiling; (b) snapshot of atomic configuration after homogeneous nucleation of superheated liquid and locally enlarged image
    Simulated cluster size distributions of ablation plumes. (a) Laser fluence of 20 mJ/cm2; (b) laser fluence of 50 mJ/cm2; (c) laser fluence of 100 mJ/cm2; (d) laser fluence of 200 mJ/cm2
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    Haojie An, Jinshi Wang, Fengzhou Fang. Study of Laser Ablation on 4H‑SiC by Three‑Dimensional Molecular Dynamics[J]. Chinese Journal of Lasers, 2024, 51(20): 2002401

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    Paper Information

    Category: Laser Micro-Nano Manufacturing

    Received: Dec. 25, 2023

    Accepted: Feb. 5, 2024

    Published Online: Oct. 12, 2024

    The Author Email: Fang Fengzhou (fzfang@tju.edu.cn)

    DOI:10.3788/CJL231570

    CSTR:32183.14.CJL231570

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